Apparatus for plasma atomic layer deposition

An apparatus for plasma atomic layer deposition for forming a thin film on a substrate, the apparatus comprising:

• a film forming chamber;
• a plate electrode provided so as to face a substrate retained in the film forming chamber;
• a counter electrode retaining the substrate within the film forming chamber;
• a gas-introducing opening section provided in one side wall section of the film forming chamber;
• and an exhaust opening section provided in the other side wall section, which faces the one side wall section, of the film forming chamber, wherein
• the apparatus for plasma atomic layer deposition further comprises:
• an insulating injector adhesion preventive member which is mountable to the gas-introducing opening section from inside the film forming chamber, and is disposed in a tubular shape so as to surround an opening of the gas-introducing opening section;
• an insulating exhaust adhesion preventive member which is mountable to the exhaust opening section from inside the film forming chamber, and is disposed in a tubular shape so as to surround an opening of the exhaust opening section;
• and
• an insulating film forming chamber adhesion preventive member which is mountable to an inner wall side of the film forming chamber, wherein:
• the injector adhesion preventive member is separated from each of the plate electrode and the counter electrode side by a gap, and is configured such that its tip end is located inside with reference to the plate electrode end on the gas-introducing opening section side,
• the exhaust adhesion preventive member is separated from each of the plate electrode and the counter electrode side by a gap, and is configured such that its tip end is located inside with reference to the plate electrode end on the exhaust opening section side, and
• the film forming chamber adhesion preventive member is located at least on each side of the injector adhesion preventive member and the exhaust adhesion preventive member so as to be separated from each of the plate electrode and the counter electrode side by a gap;
• and
• the apparatus for plasma atomic layer deposition further comprises:
• an upper inert-gas supply port that purges inert gas toward inside the film forming chamber from the gap between the plate electrode and the film forming chamber adhesion preventive member;
• a lower inert-gas supply port that purges inert gas toward inside the film forming chamber from the gap between the counter electrode and each of the injector adhesion preventive member, the exhaust adhesion preventive member, and the film forming chamber adhesion preventive member;
• an upper inert-gas supply section to be connected to the upper inert-gas supply port;
• and
• a lower inert-gas supply section to be connected to the lower inert-gas supply port.