Uniformity control for plasma processing using wall recombination

A method, comprising:

• obtaining a process result profile of a first substrate, the process result profile comprising a plurality of thickness values of the first substrate measured after processing the first substrate in a processing chamber having a chamber body with walls comprising a first material having a first set plasma recombination coefficients;
• and
• determining that the process result profile comprises a first thickness value for a first location on the first substrate that deviates from a first reference thickness value;
• responsive to determining that the process result profile comprises the first thickness value that deviates from the first reference thickness value, determining a second material having a second set plasma recombination coefficients different than the first set of plasma recombination coefficients and a second location along the chamber body proximate the first location on the first substrate;
• and
• processing a second substrate within the processing chamber with the second material disposed along the chamber body at the second location.

A processing chamber apparatus, comprising:

• a chamber body having walls with a first material enclosing an interior volume, wherein the first material has a first set of plasma recombination coefficients;
• a second material disposed along a first region of the chamber body, the first material having a second set of plasma recombination coefficients that are different than the first set of plasma recombination coefficients;
• and
• a third material disposed along a second region of the chamber body, the third material having a third set of plasma recombination coefficients that are different than the first set of plasma recombination coefficients and the second set of plasma recombination coefficients.