H01J 2237/316
Changing physical properties
H01J2237/316 (Changing physical properties) appears on 46 US grants and 49 published applications in this corpus.
Search patents in H01J- Granted patents
- 46
- Published applications
- 49
- Assignees
- 48
- Inventors
- 134
- Latest grant
- 18 Feb 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1998 | 1 | 0 |
| 1999 | 1 | 0 |
| 2000 | 3 | 0 |
| 2001 | 1 | 0 |
| 2002 | 1 | 0 |
| 2003 | 0 | 1 |
| 2004 | 2 | 2 |
| 2005 | 1 | 5 |
| 2006 | 1 | 2 |
| 2007 | 3 | 2 |
| 2008 | 1 | 2 |
| 2009 | 1 | 1 |
| 2010 | 2 | 7 |
| 2011 | 2 | 4 |
| 2012 | 0 | 3 |
| 2013 | 3 | 1 |
| 2014 | 0 | 1 |
| 2015 | 2 | 0 |
| 2016 | 1 | 4 |
| 2017 | 4 | 4 |
| 2018 | 0 | 0 |
| 2019 | 6 | 3 |
| 2020 | 3 | 0 |
| 2021 | 2 | 1 |
| 2022 | 1 | 2 |
| 2023 | 1 | 2 |
| 2024 | 1 | 1 |
| 2025 | 2 | 1 |
By publication year. Applications have been published since 2001.
Recent patents
- Ion milling device18 Feb 2025US 12,230,471 B2Hitachi High-Tech Corporation
- Method for reducing line-end space in integrated circuit patterning14 Jan 2025US 12,197,131 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Single beam plasma source10 Dec 2024US 12,165,829 B2Board of Trustees of Michigan State University
- Method for reducing line-end space in integrated circuit patterning25 Apr 2023US 11,635,695 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Enhanced electron beam generation6 Dec 2022US 11,517,975 B2Arcam AB
- Lens rebuilding system and method of rebuilding damaged lens in lithography tool16 Oct 2025US 2025/0321508 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Method for Reducing Line-End Space in Integrated Circuit Patterning21 Nov 2024US 2024/0385526 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Method for Reducing Line-End Space in Integrated Circuit Patterning17 Aug 2023US 2023/0259036 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Ion Milling Device16 Feb 2023US 2023/0048299 A1Hitachi High-Tech Corporation
- System and process implementing a wide ribbon beam ion source to implant ions in material to modify material properties10 Nov 2022US 2022/0359157 A1
Most cited
By later US patents
- Method and apparatus for in situ anneal during ion implant283US 6,111,260 AAdvanced Micro Devices, Inc. · 2000
- Process for surface treatment with ions57US 5,849,093 A1998
- Large area source for uniform electron beam generation55US 6,831,284 B2APPLIED Materials.Inc. · 2004
- Ion milling planarization of semiconductor workpieces26US 6,288,357 B1SpeedFam-IPEC Corporation · 2001
- Methods for annealing a substrate and article produced by such methods22US 6,825,101 B1Ultratech, Inc. · 2004