H01J 2237/065
Source emittance characteristics
H01J2237/065 (Source emittance characteristics) appears on 119 US grants and 128 published applications in this corpus.
Search patents in H01J- Granted patents
- 119
- Published applications
- 128
- Assignees
- 63
- Inventors
- 265
- Latest grant
- 8 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2001 | 2 | 0 |
| 2002 | 1 | 2 |
| 2003 | 4 | 1 |
| 2004 | 2 | 2 |
| 2005 | 1 | 2 |
| 2006 | 2 | 4 |
| 2007 | 2 | 2 |
| 2008 | 4 | 1 |
| 2009 | 1 | 2 |
| 2010 | 1 | 5 |
| 2011 | 4 | 6 |
| 2012 | 7 | 6 |
| 2013 | 5 | 5 |
| 2014 | 8 | 4 |
| 2015 | 6 | 10 |
| 2016 | 6 | 5 |
| 2017 | 11 | 9 |
| 2018 | 5 | 6 |
| 2019 | 8 | 9 |
| 2020 | 9 | 11 |
| 2021 | 3 | 4 |
| 2022 | 7 | 7 |
| 2023 | 7 | 11 |
| 2024 | 5 | 10 |
| 2025 | 4 | 1 |
| 2026 | 4 | 3 |
By publication year. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Spin-polarized scanning electron microscope8 Sep 2026US 12,731,760 B2Hitachi High-Tech Corporation
- Charged particle source28 Apr 2026US 12,614,691 B2ASML Netherlands B. V.
- Repeller for ion generating apparatus, ion generating apparatus and semiconductor wafer ion implantation apparatus21 Apr 2026US 12,609,263 B2Samsung Electronics Co., Ltd.
- Grid structures of ion beam etching (IBE) systems3 Feb 2026US 12,542,254 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Charged particle gun and charged particle beam system11 Nov 2025US 12,469,664 B2Hitachi High-Tech Corporation
- Charged Particle Beam Device6 Aug 2026US 2026/0229443 A1Hitachi High-Tech Corporation
- Grid structures of ion beam etching (ibe) systems21 May 2026US 2026/0142123 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Electron beam apparatus and method for generating a pulsed electron beam and applications thereof16 Apr 2026US 2026/0106104 A1MAX-PLANCK-GESELLSCHAFT zur FOERDERUNG der WISSENSCHAFTEN.e.V
- Photo-assisted electron beam emitter20 Feb 2025US 2025/0062095 A1Board of Trustees of Michigan State University
- Voltage control for etching systems21 Nov 2024US 2024/0387139 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Illumination system for electron beam lithography tool63US 6,333,508 B1Elith LLC · 2001
- High-speed electron beam inspection58US 7,315,022 B1KLA-Tencor Technologies Corporation · 2008
- Ion source47US 7,767,977 B1Varian Semiconductor Equipment Associates, Inc. · 2010
- Suppression of emission noise for microcolumn applications in electron beam inspection10US 6,555,830 B1APPLIED Materials.Inc. · 2003
- Electron gun with magnetic immersion double condenser lenses9US 7,893,406 B1Hermes Microvision, Inc. · 2011