Repeller for ion generating apparatus, ion generating apparatus and semiconductor wafer ion implantation apparatus
AssigneeSamsung Electronics Co., Ltd.
InventorKyoungchul Yoo
Life of this patent
Estimating the term…
Abstract
A repeller may be mounted inside an arc chamber of an ion implantation apparatus for doping impurities into a surface film of a semiconductor wafer. The repeller may include a body including an outer circumferential surface and a surface area enlargement portion on the body. The surface area enlargement portion may include striped grooves continuously formed on the outer circumferential surface of the body at intervals in a longitudinal direction of the body.
Claims20
A repeller for mounting inside an arc chamber of an ion implantation apparatus for doping impurities into a surface film of a semiconductor wafer, the repeller comprising:
- a body including an outer circumferential surface;
- and
- a surface area enlargement portion on the body, the surface area enlargement portion including striped grooves continuously formed on the outer circumferential surface of the body at intervals in a longitudinal direction of the body.
An ion generating apparatus comprising:
- an arc chamber defining a space for generating plasma, the arc chamber including a first side and a second side;
- a cathode, the cathode in the arc chamber and supported on the first side of the arc chamber;
- and
- a repeller, the repeller being in the arc chamber and supported on the second side of the arc chamber, the repeller facing the cathode, wherein
- the repeller includes a surface area enlargement portion on an outer circumferential surface of the repeller, and
- the surface area enlargement portion includes striped grooves continuously formed at intervals in a longitudinal direction of the repeller.
A semiconductor wafer ion implantation apparatus comprising:
- an ion generating apparatus including an arc chamber defining a space for generating plasma, a cathode in the arc chamber and supported on a first side of the arc chamber, and a repeller in the arc chamber and supported on a second side of the arc chamber, the repeller facing the cathode;
- and
- an implantation chamber for injecting an ion beam emitted through the arc chamber into a semiconductor wafer, wherein
- the repeller includes a surface area enlargement portion on an outer circumferential surface of the repeller, and
- the surface area enlargement portion includes striped grooves continuously formed at intervals in a longitudinal direction of the repeller.
Dependencies are inferred from the claim text.