H01F 10/32
Spin-exchange-coupled multilayers
Official title: Spin-exchange-coupled multilayers, e.g. nanostructured superlattices {(applying spin-exchange-coupled multilayers to substrates H01F41/302)}
H01F10/32 (Spin-exchange-coupled multilayers) appears on 3,233 US grants and 3,164 published applications in this corpus.
Search patents in H01F- Granted patents
- 3,233
- Published applications
- 3,164
- Assignees
- 529
- Inventors
- 3,309
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 3 | 0 |
| 1977 | 1 | 0 |
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 1 | 0 |
| 1982 | 2 | 0 |
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 3 | 0 |
| 1986 | 3 | 0 |
| 1987 | 6 | 0 |
| 1988 | 1 | 0 |
| 1989 | 2 | 0 |
| 1990 | 6 | 0 |
| 1991 | 10 | 0 |
| 1992 | 7 | 0 |
| 1993 | 6 | 0 |
| 1994 | 9 | 0 |
| 1995 | 12 | 0 |
| 1996 | 24 | 0 |
| 1997 | 40 | 0 |
| 1998 | 45 | 0 |
| 1999 | 48 | 0 |
| 2000 | 66 | 0 |
| 2001 | 69 | 48 |
| 2002 | 76 | 123 |
| 2003 | 112 | 125 |
| 2004 | 139 | 158 |
| 2005 | 118 | 161 |
| 2006 | 136 | 149 |
| 2007 | 110 | 128 |
| 2008 | 97 | 142 |
| 2009 | 98 | 123 |
| 2010 | 96 | 124 |
| 2011 | 127 | 111 |
| 2012 | 126 | 122 |
| 2013 | 140 | 109 |
| 2014 | 122 | 110 |
| 2015 | 106 | 86 |
| 2016 | 94 | 76 |
| 2017 | 79 | 82 |
| 2018 | 63 | 121 |
| 2019 | 155 | 217 |
| 2020 | 187 | 232 |
| 2021 | 176 | 174 |
| 2022 | 146 | 131 |
| 2023 | 125 | 101 |
| 2024 | 106 | 98 |
| 2025 | 98 | 79 |
| 2026 | 35 | 34 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
- H01F 10/324Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer3,024
- H01F 10/3227Exchange coupling via one or more magnetisable ultrathin or granular films151
- H01F 10/3218Exchange coupling of magnetic films via an antiferromagnetic interface130
- H01F 10/3204Exchange coupling of amorphous multilayers80
- H01F 10/3213Exchange coupling of magnetic semiconductor multilayers45
- H01F 10/3222Exchange coupled hard/soft multilayers25
- H01F 10/3209Exchange coupling of garnet multilayers15
Recent patents
- Fe-x templating layers for growth of perpendicularly magnetized Heusler films on top of a tunnel barrier6 Oct 2026US 12,755,770 B2Samsung Electronics Co., Ltd.
- Thin film inductor element and thin film variable inductor element6 Oct 2026US 12,755,882 B2Japan Atomic Energy Agency
- Magnetic tunnel junction based molecular spintronics device and magnetic resonance sensors6 Oct 2026US 12,755,883 B2University of the District of Columbia
- Nitride seed layer with high thermal stability for growth of perpendicularly magnetized Heusler films6 Oct 2026US 12,757,640 B2Samsung Electronics Co., Ltd.
- Large Dzyaloshinskii-Moriya interaction and perpendicular magnetic anisotropy induced by chemisorbed species on ferromagnets29 Sep 2026US 12,749,609 B2Georgetown University
- Method of fabricating physically unclonable function (puf) device and method of generating random bits by using puf device8 Oct 2026US 2026/0310832 A1Hyundai Motor Company
- Magnetic random access memory with free layer8 Oct 2026US 2026/0314267 A1Samsung Electronics Co., Ltd.
- Magnetoresistance effect element1 Oct 2026US 2026/0302032 A1TDK Corporation
- Memory device and manufacturing method thereof17 Sep 2026US 2026/0282759 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Physically unclonable function device and cryptographic key generation apparatus using the same3 Sep 2026US 2026/0260800 A1Korea University Research and Business Foundation
Most cited
By later US patents
- Magnetic device with optimized heat confinement1,021US 8,411,500 B2Crocus Technology SA · 2013
- Electronic device using magnetic components385US 5,695,864 AInternational Business Machines Corporation · 1997
- Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization315US 6,992,359 B2Grandis, Inc. · 2006
- Magnetic element utilizing spin transfer and an MRAM device using the magnetic element308US 6,714,444 B2Grandis, Inc. · 2004
- Current-induced magnetic switching device and memory including the same272US 6,256,223 B1International Business Machines Corporation · 2001