H01F 10/3204
Exchange coupling of amorphous multilayers
Official title: {Exchange coupling of amorphous multilayers}
H01F10/3204 (Exchange coupling of amorphous multilayers) appears on 80 US grants and 70 published applications in this corpus.
Search patents in H01F- Granted patents
- 80
- Published applications
- 70
- Assignees
- 46
- Inventors
- 173
- Latest grant
- 24 Oct 2023
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1981 | 1 | 0 |
| 1982 | 2 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 1 | 0 |
| 1987 | 0 | 0 |
| 1988 | 1 | 0 |
| 1989 | 0 | 0 |
| 1990 | 1 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 2 | 0 |
| 1997 | 0 | 0 |
| 1998 | 2 | 0 |
| 1999 | 5 | 0 |
| 2000 | 1 | 0 |
| 2001 | 1 | 1 |
| 2002 | 2 | 2 |
| 2003 | 1 | 2 |
| 2004 | 2 | 8 |
| 2005 | 2 | 9 |
| 2006 | 8 | 3 |
| 2007 | 4 | 6 |
| 2008 | 5 | 7 |
| 2009 | 1 | 4 |
| 2010 | 4 | 0 |
| 2011 | 4 | 3 |
| 2012 | 3 | 1 |
| 2013 | 2 | 1 |
| 2014 | 0 | 4 |
| 2015 | 2 | 3 |
| 2016 | 2 | 1 |
| 2017 | 2 | 3 |
| 2018 | 3 | 4 |
| 2019 | 3 | 3 |
| 2020 | 6 | 1 |
| 2021 | 2 | 1 |
| 2022 | 3 | 3 |
| 2023 | 2 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Magnetic laminate, magnetic structure including same, electronic component including magnetic laminate or magnetic structure, and method for producing magnetic laminate24 Oct 2023US 11,798,725 B2Murata Manufacturing Co., Ltd.
- Magnetic elements of amorphous based dual free layer structures and recording devices using such elements3 Oct 2023US 11,776,725 B2Western Digital Technologies, Inc.
- Amorphous spin diffusion layer for modified double magnetic tunnel junction structure15 Nov 2022US 11,501,810 B2International Business Machines Corporation
- Magnetic elements of amorphous based dual free layer structures and recording devices using such elements30 Aug 2022US 11,430,592 B2Western Digital Technologies, Inc.
- Methods and apparatus of high moment free layers for magnetic tunnel junctions22 Mar 2022US 11,283,006 B1Western Digital Technologies, Inc.
- Magnetic elements of amorphous based dual free layer structures and recording devices using such elements17 Nov 2022US 2022/0367099 A1Western Digital Technologies, Inc.
- Amorphous spin diffusion layer for modified double magnetic tunnel junction structure22 Sep 2022US 2022/0301612 A1International Business Machines Corporation
- Magnetic Elements of Amorphous Based Dual Free Layer Structures and Recording Devices Using Such Elements24 Mar 2022US 2022/0093305 A1Western Digital Technologies, Inc.
- Magnetic laminate, magnetic structure including same, electronic component including magnetic laminate or magnetic structure, and method for producing magnetic laminate14 Jan 2021US 2021/0012942 A1Murata Manufacturing Co., Ltd.
- Storage device19 Mar 2020US 2020/0091410 A1Toshiba Memory Corporation
Most cited
By later US patents
- Magneto-resistance effect element, magneto-resistance effect memory cell, MRAM and method for performing information write to or read from the magneto-resistance effect memory cell138US 6,436,526 B1Matsushita Electric Industrial Co., Ltd. · 2002
- MTJ elements with high spin polarization layers configured for spin-transfer switching and spintronics devices using the magnetic elements134US 7,241,631 B2Grandis, Inc. · 2007
- Amorphous alloys for magnetic devices82US 6,831,312 B2Freescale Semiconductor, Inc. · 2004
- Magnetic tunnel junction and memory device including the same48US 7,378,698 B2Samsung Electronics Co., Ltd. · 2008
- Magnetoresistive effect element, magnetic memory device and manufacturing method of magnetoresistive effect element and magnetic memory device47US 7,026,671 B2Sony Corporation · 2006