MTJ elements with high spin polarization layers configured for spin-transfer switching and spintronics devices using the magnetic elements

A magnetic element comprising:

• a first pinned layer;
• a first barrier layer, the first barrier layer being insulating and configured to allow tunneling through the first barrier layer, the first barrier layer having an interface with another layer, the interface having a structure that provides a high spin polarization of at least fifty percent, the first barrier layer including MgO;
• a free layer, the first barrier layer residing between the first pinned layer and the free layer;
• a second barrier layer, the free layer residing between the first barrier layer and the second barrier layer, the second barrier layer being insulating and configured to allow tunneling through the second barrier layer, the second barrier layer including at least one of MgO and aluminum oxide;
• a second pinned layer, the second barrier layer residing between the free layer and the second pinned layer;
• wherein the magnetic element is configured to allow the free layer to be switched due to spin transfer when a write current is passed through the magnetic element.

The magnetic element comprising:

• a pinned layer;
• a barrier layer, the barrier layer being crystalline MgO having a 100 or 111 texture and being configured to allow tunneling through the barrier layer;
• a free layer, the barrier layer residing between the pinned layer and the free layer, the free layer having at least one of a low moment and a low perpendicular anisotropy;
• wherein the magnetic element is configured to allow the free layer to be switched due to spin transfer when a write current is passed through the magnetic element.

A method for providing a magnetic element comprising:

• providing a first pinned layer;
• providing a first barrier layer, the first barrier layer being insulating and configured to allow tunneling through the first barrier layer, the first barrier layer having an interface with another layer, the interface having a structure that provides a high spin polarization of at least fifty percent;
• providing a free layer, the first barrier layer residing between the first pinned layer and the free layer;
• providing a second barrier layer, the free layer residing between the first barrier layer and the second barrier layer, the second barrier layer being insulating and configured to allow tunneling through the second barrier layer;
• providing a second pinned layer, the second barrier layer residing between the free layer and the second pinned layer;
• wherein the magnetic element is configured to allow the free layer to be switched due to spin transfer when a write current is passed through the magnetic element.