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US 2020/0091410 A1Published application
Storage device
AssigneeToshiba Memory Corporation
InventorsEiji KITAGAWA, Young Min EEH, Tadaaki OIKAWA, Kenichi YOSHINO, Kazuya SAWADA, Taiga ISODA
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Abstract
According to an embodiment, a storage device includes a resistance change element. The resistance change element includes a stacked structure including a first ferromagnet, a second ferromagnet, and a first nonmagnet between the first ferromagnet and the second ferromagnet. The first nonmagnet includes a boron-doped rare-earth oxide.
Claims19
A storage device comprising:
- a resistance change element, wherein
- the resistance change element comprises a stacked structure including a first ferromagnet, a second ferromagnet, and a first nonmagnet between the first ferromagnet and the second ferromagnet, the first nonmagnet including a boron-doped rare-earth oxide.
Dependencies are inferred from the claim text.