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US 6,436,526 B1Granted
Magneto-resistance effect element, magneto-resistance effect memory cell, MRAM and method for performing information write to or read from the magneto-resistance effect memory cell
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsAkihiro Odagawa, Hiroshi Sakakima, Masayoshi Hiramoto, Nozomu Matsukawa
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Abstract
A magneto-resistive effect element includes a first ferromagnetic film; a second ferromagnetic film; and a first nonmagnetic film interposed between the first ferromagnetic film and the second ferromagnetic film. The first ferromagnetic film has a magnetization more easily rotatable than a magnetization of the second ferromagnetic film by an external magnetic field. The first ferromagnetic film has an effective magnetic thickness of about 2 nm or less.
Claims49
A magneto-resistive effect element, comprising:
- a first ferromagnetic film;
- a second ferromagnetic film;
- and
- a first nonmagnetic film interposed between the first ferromagnetic film and the second ferromagnetic film,
- wherein:
- the first ferromagnetic film has a magnetization more easily rotatable than a magnetization of the second ferromagnetic film by an external magnetic field, and
- the first ferromagnetic film has an effective magnetic thickness of about 2 nm or less.
4 more elements
A magneto-resistive effect memory cell, comprising:
- a first ferromagnetic film;
- a second ferromagnetic film;
- a first nonmagnetic film interposed between the first ferromagnetic film and the second ferromagnetic film;
- and
- at least one conductive film for causing a magnetization rotation of at least the first ferromagnetic film,
- wherein:
- the first ferromagnetic film has a magnetization more easily rotatable than a magnetization of the second ferromagnetic film by an external magnetic field, and
- the first ferromagnetic film has an effective magnetic thickness of about 2 nm or less.
5 more elements
Dependencies are inferred from the claim text.