Large Dzyaloshinskii-Moriya interaction and perpendicular magnetic anisotropy induced by chemisorbed species on ferromagnets

An apparatus for generating a Dzyaloshinskii-Moriya interaction or a perpendicular magnetic anisotropy comprising:

• a thin film ferromagnetic structure;
• and
• a substance chemisorbed on a surface of the thin film ferromagnetic structure, wherein the chemisorption of the substance on the surface of the thin film ferromagnetic structure forms chemisorption bonds between the substance and the thin film ferromagnetic structure surface, wherein the chemisorption bonds induce the Dzyaloshinskii-Moriya interaction or the perpendicular magnetic anisotropy at an interface between the chemisorbed substance and the thin film ferromagnetic structure, wherein the substance chemisorbed on the surface of the thin film ferromagnetic structure is selected from a group comprising O2, H2, N2, F2, NH3, H2O, CH3, CH4, CO, CO2, fullerene (C60 and C70), bathocuproine, Tris (8-hydroxyquinoline) aluminum (III), and their ionic species such as O2−, H+, N3−, F− and OH−.

An apparatus for generating a Dzyaloshinskii-Moriya interaction or a perpendicular magnetic anisotropy comprising:

• a thin film ferromagnetic structure;
• and
• a substance chemisorbed on a surface of the thin film ferromagnetic structure, wherein the chemisorption of the substance on the surface of the thin film ferromagnetic structure forms chemisorption bonds between the substance and the thin film ferromagnetic structure surface, wherein the chemisorption bonds induce the Dzyaloshinskii-Moriya interaction or the perpendicular magnetic anisotropy at an interface between the chemisorbed substance and the thin film ferromagnetic structure, wherein changing a coverage of the surface by the chemisorbed substance changes the Dzyaloshinskii-Moriya interaction or the perpendicular magnetic anisotropy of the apparatus and thereby changes a magnetic domain wall chirality or a skyrmion size.

An apparatus for generating a Dzyaloshinskii-Moriya interaction or a perpendicular magnetic anisotropy comprising:

• a thin film ferromagnetic structure;
• and
• a substance chemisorbed on a surface of the thin film ferromagnetic structure, wherein the chemisorption of the substance on the surface of the thin film ferromagnetic structure forms chemisorption bonds between the substance and the thin film ferromagnetic structure surface, wherein the chemisorption bonds induce the Dzyaloshinskii-Moriya interaction or the perpendicular magnetic anisotropy at an interface between the chemisorbed substance and the thin film ferromagnetic structure, wherein monitoring the chemisorption-induced Dzyaloshinskii-Moriya interaction is used as a gas sensor detecting presence of gases including at least one of O2, H2, N2, F2, or NH3.

An apparatus for generating a Dzyaloshinskii-Moriya interaction or a perpendicular magnetic anisotropy comprising:

• a thin film ferromagnetic structure;
• and
• a substance chemisorbed on a surface of the thin film ferromagnetic structure. wherein the chemisorption of the substance on the surface of the thin film ferromagnetic structure forms chemisorption bonds between the substance and the thin film ferromagnetic structure surface, wherein the chemisorption bonds induce the Dzyaloshinskii-Moriya interaction or the perpendicular magnetic anisotropy at an interface between the chemisorbed substance and the thin film ferromagnetic structure, wherein the Dzyaloshinskii-Moriya interaction is controlled so as to move a domain wall or skyrmion in a racetrack memory, including a three dimensional racetrack memory, by changing a coverage of the chemisorbed substance.