H01F 10/3213
Exchange coupling of magnetic semiconductor multilayers
Official title: {Exchange coupling of magnetic semiconductor multilayers, e.g. MnSe/ZnSe superlattices}
H01F10/3213 (Exchange coupling of magnetic semiconductor multilayers) appears on 45 US grants and 39 published applications in this corpus.
Search patents in H01F- Granted patents
- 45
- Published applications
- 39
- Assignees
- 43
- Inventors
- 117
- Latest grant
- 15 Apr 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1990 | 1 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 1 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 2 | 0 |
| 1999 | 1 | 0 |
| 2000 | 2 | 0 |
| 2001 | 2 | 2 |
| 2002 | 4 | 3 |
| 2003 | 4 | 6 |
| 2004 | 3 | 7 |
| 2005 | 6 | 2 |
| 2006 | 3 | 1 |
| 2007 | 1 | 4 |
| 2008 | 2 | 1 |
| 2009 | 2 | 0 |
| 2010 | 2 | 1 |
| 2011 | 0 | 0 |
| 2012 | 0 | 0 |
| 2013 | 0 | 1 |
| 2014 | 0 | 0 |
| 2015 | 1 | 0 |
| 2016 | 0 | 1 |
| 2017 | 1 | 2 |
| 2018 | 2 | 2 |
| 2019 | 1 | 1 |
| 2020 | 0 | 1 |
| 2021 | 1 | 0 |
| 2022 | 1 | 1 |
| 2023 | 1 | 1 |
| 2024 | 0 | 1 |
| 2025 | 1 | 1 |
By publication year. Applications have been published since 2001.
Recent patents
- Magnetoresistance effect element15 Apr 2025US 12,278,033 B2TDK Corporation
- Oxide interface displaying electronically controllable ferromagnetism27 Jun 2023US 11,688,539 B2University of Pittsburgh—Of the Commonwealth System of Higher Education
- Apparatus and method for boosting signal in magnetoelectric spin orbit logic15 Nov 2022US 11,502,188 B2Intel Corporation
- Oxide interface displaying electronically controllable ferromagnetism21 Dec 2021US 11,205,535 B2University of Pittsburgh—Of the Commonwealth System of Higher Education
- Oxide interface displaying electronically controllable ferromagnetism26 Nov 2019US 10,490,331 B2University of Pittsburgh—Of the Commonwealth System of Higher Education
- Magnetoresistance effect element31 Jul 2025US 2025/0246354 A1TDK Corporation
- Variable resistance element and semiconductor device including the same21 Mar 2024US 2024/0099157 A1SK hynix Inc.
- Magnetoresistance effect element11 May 2023US 2023/0144429 A1TDK Corporation
- Oxide interface displaying electronically controllable ferromagnetism17 Mar 2022US 2022/0084731 A1University of Pittsburgh—Of the Commonwealth System of Higher Education
- Oxide interface displaying electronically controllable ferromagnetism23 Apr 2020US 2020/0126705 A1University of Pittsburgh—Of the Commonwealth System of Higher Education
Most cited
By later US patents
- Current-induced magnetic switching device and memory including the same272US 6,256,223 B1International Business Machines Corporation · 2001
- Spin dependent tunneling barriers formed with a magnetic alloy154US 6,747,301 B1Western Digital (Fremont), LLC · 2004
- Methods of making spintronic devices with constrained spintronic dopant119US 7,625,767 B2Mears Technologies, Inc. · 2009
- Magnetic devices and sensors based on perovskite manganese oxide materials97US 5,792,569 AInternational Business Machines Corporation · 1998
- Current-induced magnetic switching device and memory including the same61US 6,130,814 AInternational Business Machines Corporation · 2000