Magnetoresistance effect element
AssigneeTDK Corporation
InventorsShinto Ichikawa, Katsuyuki Nakada, Kazuumi Inubushi
Life of this patent
Estimating the term…
Abstract
A magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a nonmagnetic layer. The nonmagnetic layer is between the first ferromagnetic layer and the second ferromagnetic layer. At least one of the first ferromagnetic layer and the second ferromagnetic layer is a Heusler alloy layer. The nonmagnetic layer includes a first region and a second region in a plane. Both of the first region and the second region are formed of a metal. The second region is different in constituent material from the first region. The second region has a crystal structure of a body-centered cubic lattice structure (bcc).
Claims13
A magnetoresistance effect element comprising:
- a first ferromagnetic layer, a second ferromagnetic layer, and a nonmagnetic layer,
- wherein the nonmagnetic layer is between the first ferromagnetic layer and the second ferromagnetic layer,
- wherein at least one of the first ferromagnetic layer and the second ferromagnetic layer is a Heusler alloy layer,
- wherein the nonmagnetic layer includes a first region and a second region in a plane,
- wherein both of the first region and the second region are formed of a metal,
- wherein the second region is different in constituent material from the first region, and
- wherein the second region has a crystal structure of a body-centered cubic lattice structure (bcc).
Dependencies are inferred from the claim text.