Methods of making spintronic devices with constrained spintronic dopant

A method for making a spintronic device comprising:

• forming at least one superlattice;
• and
• forming at least one electrical contact coupled to the at least one superlattice;
• the at least one superlattice comprising a plurality of groups of layers with each group of layers comprising
• a plurality of stacked base Silicon monolayers defining a base Silicon portion having a crystal lattice,
• at least one Oxygen monolayer constrained within the crystal lattice of adjacent base Silicon portions, and
• at least one spintronic dopant monolayer adjacent the at least one non-semiconductor monolayer and constrained within the crystal lattice of the base Silicon portion by the at least one Oxygen monolayer.

A method for making spintronic device comprising:

• forming a plurality of stacked base semiconductor monolayers defining a base semiconductor portion having a crystal lattice;
• forming at least one non-semiconductor monolayer constrained within the crystal lattice;
• providing at least one spintronic dopant monolayer adjacent the at least one non-semiconductor monolayer and constrained within the crystal lattice of the base semiconductor portion by the at least one non-semiconductor monolayer;
• and
• forming an electrical contact coupled to the base semiconductor portion.