H01F 10/3227
Exchange coupling via one or more magnetisable ultrathin or granular films
Official title: {Exchange coupling via one or more magnetisable ultrathin or granular films}
H01F10/3227 (Exchange coupling via one or more magnetisable ultrathin or granular films) appears on 151 US grants and 171 published applications in this corpus.
Search patents in H01F- Granted patents
- 151
- Published applications
- 171
- Assignees
- 92
- Inventors
- 362
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1995 | 1 | 0 |
| 1996 | 1 | 0 |
| 1997 | 2 | 0 |
| 1998 | 3 | 0 |
| 1999 | 2 | 0 |
| 2000 | 5 | 0 |
| 2001 | 3 | 0 |
| 2002 | 3 | 10 |
| 2003 | 7 | 6 |
| 2004 | 6 | 7 |
| 2005 | 2 | 13 |
| 2006 | 7 | 11 |
| 2007 | 5 | 10 |
| 2008 | 3 | 13 |
| 2009 | 7 | 11 |
| 2010 | 9 | 1 |
| 2011 | 10 | 9 |
| 2012 | 4 | 7 |
| 2013 | 16 | 15 |
| 2014 | 6 | 6 |
| 2015 | 6 | 5 |
| 2016 | 2 | 3 |
| 2017 | 5 | 5 |
| 2018 | 3 | 5 |
| 2019 | 2 | 5 |
| 2020 | 8 | 8 |
| 2021 | 9 | 7 |
| 2022 | 5 | 5 |
| 2023 | 1 | 5 |
| 2024 | 5 | 1 |
| 2025 | 1 | 2 |
| 2026 | 2 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Large Dzyaloshinskii-Moriya interaction and perpendicular magnetic anisotropy induced by chemisorbed species on ferromagnets29 Sep 2026US 12,749,609 B2Georgetown University
- Magnetic tunnel junction (MTJ) element and its fabrication process10 Mar 2026US 12,575,334 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Ferromagnetic-polymer composite material and structures comprising same11 Feb 2025US 12,224,091 B2Ferric Inc.
- Magnetic tunneling junction element with a composite capping layer and magnetoresistive random access memory device using the same1 Oct 2024US 12,108,684 B2HeFeChip Corporation Limited
- Ferromagnetic free layer, preparation method and application thereof10 Sep 2024US 12,089,503 B2Shandong University
- Magnetic tunnel junction (mtj) element and its fabrication process18 Jun 2026US 2026/0173766 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Ferromagnetic-Polymer Composite Material and Structures Comprising Same15 May 2025US 2025/0157707 A1Ferric Inc.
- Magnetoresistive element having high out-of-plane sensitivity2 Jan 2025US 2025/0004073 A1Allegro MicroSystems, LLC
- Magnetic tunnel junction (mtj) element and its fabrication process19 Sep 2024US 2024/0315144 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Spintronic nanodevice for low-power, cellular-level, magnetic neurostimulation18 May 2023US 2023/0149729 A1Regents of the University of Minnesota
Most cited
By later US patents
- Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization315US 6,992,359 B2Grandis, Inc. · 2006
- Current-induced magnetic switching device and memory including the same272US 6,256,223 B1International Business Machines Corporation · 2001
- Perpendicular magnetization magnetic element utilizing spin transfer241US 6,967,863 B2Grandis, Inc. · 2005
- Spin dependent tunneling barriers doped with magnetic particles160US 6,639,291 B1Western Digital (Fremont), LLC · 2003
- Magnetic devices using nanocomposite materials126US 6,713,195 B2NVE Corporation · 2004