Spin dependent tunneling barriers doped with magnetic particles
AssigneeWestern Digital (Fremont), LLC
InventorsKyusik Sin, Shin Funada, Hugh Craig Hiner, Hua-Ching Tong, Xizeng Shi
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AssigneeWestern Digital (Fremont), LLC
InventorsKyusik Sin, Shin Funada, Hugh Craig Hiner, Hua-Ching Tong, Xizeng Shi
Estimating the term…
A tunneling barrier for a spin dependent tunneling (SDT) device is disclosed that includes a plurality of ferromagnetic particles. The presence of such particles in the tunneling barrier has been found to increase a magnetoresistance or ΔR/R response, improving the signal and the signal to noise ratio. Such an increased ΔR/R response also offers the possibility of decreasing an area of the tunnel barrier layer and/or increasing a thickness of the tunnel barrier layer. Decreasing the area of the tunnel barrier layer can afford improvements in resolution of devices such as MR sensors and increased density of devices such as of MRAM cells. Increasing the thickness of the tunnel barrier can afford improvements in manufacturing such as increased yield.
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Dependencies are inferred from the claim text.