H01F 10/3231
Via a non-magnetic spacer
Official title: {via a non-magnetic spacer}
H01F10/3231 (Via a non-magnetic spacer) appears on 111 US grants and 139 published applications in this corpus.
Search patents in H01F- Granted patents
- 111
- Published applications
- 139
- Assignees
- 79
- Inventors
- 289
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1997 | 1 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 1 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 5 |
| 2003 | 4 | 3 |
| 2004 | 4 | 2 |
| 2005 | 2 | 11 |
| 2006 | 3 | 5 |
| 2007 | 3 | 7 |
| 2008 | 1 | 12 |
| 2009 | 5 | 5 |
| 2010 | 8 | 1 |
| 2011 | 5 | 8 |
| 2012 | 3 | 7 |
| 2013 | 16 | 15 |
| 2014 | 6 | 6 |
| 2015 | 6 | 5 |
| 2016 | 2 | 3 |
| 2017 | 5 | 5 |
| 2018 | 3 | 5 |
| 2019 | 2 | 5 |
| 2020 | 8 | 8 |
| 2021 | 9 | 7 |
| 2022 | 5 | 5 |
| 2023 | 1 | 5 |
| 2024 | 5 | 1 |
| 2025 | 1 | 2 |
| 2026 | 2 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Large Dzyaloshinskii-Moriya interaction and perpendicular magnetic anisotropy induced by chemisorbed species on ferromagnets29 Sep 2026US 12,749,609 B2Georgetown University
- Magnetic tunnel junction (MTJ) element and its fabrication process10 Mar 2026US 12,575,334 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Ferromagnetic-polymer composite material and structures comprising same11 Feb 2025US 12,224,091 B2Ferric Inc.
- Magnetic tunneling junction element with a composite capping layer and magnetoresistive random access memory device using the same1 Oct 2024US 12,108,684 B2HeFeChip Corporation Limited
- Ferromagnetic free layer, preparation method and application thereof10 Sep 2024US 12,089,503 B2Shandong University
- Magnetic tunnel junction (mtj) element and its fabrication process18 Jun 2026US 2026/0173766 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Ferromagnetic-Polymer Composite Material and Structures Comprising Same15 May 2025US 2025/0157707 A1Ferric Inc.
- Magnetoresistive element having high out-of-plane sensitivity2 Jan 2025US 2025/0004073 A1Allegro MicroSystems, LLC
- Magnetic tunnel junction (mtj) element and its fabrication process19 Sep 2024US 2024/0315144 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Spintronic nanodevice for low-power, cellular-level, magnetic neurostimulation18 May 2023US 2023/0149729 A1Regents of the University of Minnesota
Most cited
By later US patents
- Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization315US 6,992,359 B2Grandis, Inc. · 2006
- Perpendicular magnetization magnetic element utilizing spin transfer241US 6,967,863 B2Grandis, Inc. · 2005
- Magnetic devices using nanocomposite materials126US 6,713,195 B2NVE Corporation · 2004
- Thin films for magnetic device117US 7,220,669 B2ASM International N.V. · 2007
- Magnetic memory element and nonvolatile memory device97US 8,716,817 B2Kabushiki Kaisha Toshiba · 2014