H01F 10/3236
Made of a noble metal
Official title: {made of a noble metal, e.g.(Co/Pt) n multilayers having perpendicular anisotropy (H01F10/3286 takes precedence)}
H01F10/3236 (Made of a noble metal) appears on 81 US grants and 107 published applications in this corpus.
Search patents in H01F- Granted patents
- 81
- Published applications
- 107
- Assignees
- 62
- Inventors
- 223
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1997 | 1 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 1 |
| 2004 | 1 | 0 |
| 2005 | 1 | 8 |
| 2006 | 1 | 3 |
| 2007 | 1 | 4 |
| 2008 | 0 | 9 |
| 2009 | 3 | 4 |
| 2010 | 4 | 0 |
| 2011 | 4 | 6 |
| 2012 | 1 | 7 |
| 2013 | 16 | 14 |
| 2014 | 5 | 6 |
| 2015 | 5 | 4 |
| 2016 | 2 | 3 |
| 2017 | 5 | 5 |
| 2018 | 3 | 4 |
| 2019 | 2 | 5 |
| 2020 | 7 | 7 |
| 2021 | 8 | 7 |
| 2022 | 5 | 4 |
| 2023 | 0 | 3 |
| 2024 | 4 | 1 |
| 2025 | 0 | 1 |
| 2026 | 2 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Large Dzyaloshinskii-Moriya interaction and perpendicular magnetic anisotropy induced by chemisorbed species on ferromagnets29 Sep 2026US 12,749,609 B2Georgetown University
- Magnetic tunnel junction (MTJ) element and its fabrication process10 Mar 2026US 12,575,334 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Magnetic tunneling junction element with a composite capping layer and magnetoresistive random access memory device using the same1 Oct 2024US 12,108,684 B2HeFeChip Corporation Limited
- Ferromagnetic free layer, preparation method and application thereof10 Sep 2024US 12,089,503 B2Shandong University
- Magnetic tunnel junction (MTJ) element and its fabrication process25 Jun 2024US 12,022,743 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Magnetic tunnel junction (mtj) element and its fabrication process18 Jun 2026US 2026/0173766 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Magnetoresistive element having high out-of-plane sensitivity2 Jan 2025US 2025/0004073 A1Allegro MicroSystems, LLC
- Magnetic tunnel junction (mtj) element and its fabrication process19 Sep 2024US 2024/0315144 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Spintronic nanodevice for low-power, cellular-level, magnetic neurostimulation18 May 2023US 2023/0149729 A1Regents of the University of Minnesota
- Ferromagnetic free layer, preparation method and application thereof11 May 2023US 2023/0145391 A1Shandong University
Most cited
By later US patents
- Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization315US 6,992,359 B2Grandis, Inc. · 2006
- Perpendicular magnetization magnetic element utilizing spin transfer241US 6,967,863 B2Grandis, Inc. · 2005
- Magnetic memory element and nonvolatile memory device97US 8,716,817 B2Kabushiki Kaisha Toshiba · 2014
- Magnetoresistive element and magnetic memory64US 7,596,015 B2Kabushiki Kaisha Toshiba · 2009
- Thin-film magnetic device with strong spin polarization perpendicular to the plane of the layers, magnetic tunnel junction and spin valve using such a device29US 7,813,202 B2Centre National De La Recherche Scientifique · 2010