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US 12,108,684 B2Granted
Magnetic tunneling junction element with a composite capping layer and magnetoresistive random access memory device using the same
AssigneeHeFeChip Corporation Limited
InventorsQinli Ma, Wei-Chuan Chen, Youngsuk Choi, Shu-Jen Han
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Abstract
A magnetic tunneling junction (MTJ) element includes a reference layer, a tunnel barrier layer on the reference layer, a free layer on the tunnel barrier layer, and a composite capping layer on the free layer. The composite capping layer comprises a diffusion-stop layer on the free layer, a light-element sink layer on the diffusion-stop layer, and an amorphous layer on the light-element sink layer.
Claims36
A magnetic tunneling junction (MTJ) element, comprising:
- a reference layer;
- a tunnel barrier layer on the reference layer;
- a free layer on the tunnel barrier layer;
- and
- a composite capping layer on the free layer, wherein the composite capping layer comprises a diffusion-stop layer on the free layer, a light-element sink layer on the diffusion-stop layer, and an amorphous layer on the light-element sink layer, wherein the amorphous layer is in direct contact with the light-element sink layer.
2 more elements
A magnetoresistive random access memory (MRAM) device, comprising:
- at least one magnetic tunneling junction (MTJ) element comprising:
- a reference layer;
- a tunnel barrier layer on the reference layer;
- a free layer on the tunnel barrier layer;
- and a composite capping layer on the free layer, wherein the composite capping layer comprises a diffusion-stop layer on the free layer, a light-element sink layer on the diffusion-stop layer, and an amorphous layer on the light-element sink layer, wherein the amorphous layer is in direct contact with the light-element sink layer.
2 more elements
Dependencies are inferred from the claim text.