Thin film inductor element and thin film variable inductor element

A thin film variable inductor element comprising:

• a stacked layer film including a magnetic body layer, and a non-magnetic body layer or an antiferromagnetic body layer stacked therein;
• a barrier layer;
• a pair of electrodes for applying an alternating current or a high frequency current;
• and a gate electrode layer, wherein
• the magnetic body layer, and the non-magnetic body layer or the antiferromagnetic body layer are extended in an arbitrary shape in a direction orthogonal to a stacking direction, and the vertical orientation of the stacking direction is also arbitrary,
• the magnetic body layer has a substantially uniform magnetization structure,
• the pair of electrodes are provided at both ends to which the stacked layer film is extended, an alternating current or a high frequency current is applied,
• the barrier layer is provided so as to be further stacked on a surface closer to the non-magnetic body layer or the antiferromagnetic body layer,
• the gate electrode layer is provided so as to be further stacked on the barrier layer, and
• the gate electrode layer is applied with a positive or negative bias, thereby implementing an inductance modulating operation.

A thin film variable inductor element, comprising:

• a stacked layer film including:
• a magnetic body layer, and a non-magnetic body layer or an antiferromagnetic body layer stacked therein;
• a pair of electrodes for applying an alternating current or a high frequency current;
• and a thin film coil surrounding the stacked layer film, wherein
• the magnetic body layer, and the non-magnetic body layer or the antiferromagnetic body layer are extended in an arbitrary shape in a direction orthogonal to a stacking direction, and a vertical orientation of the stacking direction is also arbitrary,
• the magnetic body layer has a substantially uniform magnetization structure, and
• ON/OFF and/or an orientation of a current of the thin film coil is switched to control an external magnetic field, thereby implementing an inductance modulating operation.