H01F 10/3222
Exchange coupled hard/soft multilayers
Official title: {Exchange coupled hard/soft multilayers, e.g. CoPt/Co or NiFe/CoSm (nanocomposite spring magnets H01F1/0579)}
H01F10/3222 (Exchange coupled hard/soft multilayers) appears on 25 US grants and 33 published applications in this corpus.
Search patents in H01F- Granted patents
- 25
- Published applications
- 33
- Assignees
- 24
- Inventors
- 83
- Latest grant
- 2 Sep 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 1 |
| 2004 | 0 | 2 |
| 2005 | 1 | 0 |
| 2006 | 0 | 0 |
| 2007 | 1 | 5 |
| 2008 | 0 | 1 |
| 2009 | 0 | 0 |
| 2010 | 2 | 3 |
| 2011 | 2 | 1 |
| 2012 | 1 | 0 |
| 2013 | 1 | 0 |
| 2014 | 0 | 1 |
| 2015 | 0 | 1 |
| 2016 | 2 | 2 |
| 2017 | 2 | 6 |
| 2018 | 1 | 2 |
| 2019 | 1 | 0 |
| 2020 | 2 | 0 |
| 2021 | 2 | 1 |
| 2022 | 1 | 3 |
| 2023 | 1 | 1 |
| 2024 | 1 | 1 |
| 2025 | 3 | 2 |
By publication year. Applications have been published since 2001.
Recent patents
- Methods for forming structures with desired crystallinity for MRAM applications2 Sep 2025US 12,408,557 B2APPLIED Materials.Inc.
- Ferromagnetic-polymer composite material and structures comprising same11 Feb 2025US 12,224,091 B2Ferric Inc.
- Spin memory encryption14 Jan 2025US 12,201,029 B2Bryn Mawr College
- Magnetic memory device and magnetic memory apparatus5 Mar 2024US 11,922,985 B2Samsung Electronics Co., Ltd.
- Two-dimensional materials integrated with multiferroic layers14 Nov 2023US 11,817,240 B2The Government of the United States of America, as represented by the Secretary of the Navy
- Ferromagnetic-Polymer Composite Material and Structures Comprising Same15 May 2025US 2025/0157707 A1Ferric Inc.
- Spin memory encryption20 Mar 2025US 2025/0098546 A1Bryn Mawr College
- Variable resistance element and semiconductor device including the same21 Mar 2024US 2024/0099157 A1SK hynix Inc.
- Ferromagnetic-polymer composite material and structures comprising same26 Jan 2023US 2023/0027090 A1Ferric Inc.
- Spin memory encryption21 Jul 2022US 2022/0230669 A1Colorado State University Research Foundation
Most cited
By later US patents
- Magnetic tunnel junction (MTJ) memory element having tri-layer perpendicular reference layer37US 9,608,038 B2Avalanche Technology, Inc. · 2017
- Magnetic thin film, production method therefor, evaluation method therefor and magnetic head using it, magnetic recording device and magnetic device27US 6,841,259 B12005
- Method of fabricating magnets12US 4,388,131 ABurroughs Corporation · 1983
- Anisotropic thin-film rare-earth permanent magnet6US 7,285,338 B2Neomax Co., Ltd. · 2007
- Perpendicular magnetic memory element having magnesium oxide cap layer6US 9,748,471 B2Avalanche Technology, Inc. · 2017