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US 11,922,985 B2Granted
Magnetic memory device and magnetic memory apparatus
AssigneeSamsung Electronics Co., Ltd.
InventorsSyuta Honda, Yoshiaki Sonobe
Life of this patent
Estimating the term…
Abstract
A magnetic memory device is provided. The magnetic memory device includes a spin orbit torque (SOT) source configured to generate SOT, and a magnetic fine wire of which one end contacts a main surface of the SOT source. A direction of SOT generated by the SOT source is perpendicular to a direction in which the magnetic fine wire extends, and a magnetic domain in the magnetic fine wire is parallel to the direction in which the magnetic fine wire extends.
Claims19
A magnetic memory device comprising:
- a spin orbit torque (SOT) source configured to generate SOT;
- and
- a magnetic fine wire having an end contacting a main surface of the SOT source,
- wherein a direction of SOT generated by the SOT source is perpendicular to a direction in which the magnetic fine wire extends,
- a plurality of magnetic domains, in the magnetic fine wire, each of the plurality of magnetic domains corresponding to a uniform magnetic direction extending parallel to or antiparallel to the direction in which the magnetic fine wire extends, and
- the magnetic fine wire is configured to store a plurality of bits, each of the plurality of bits corresponding to respective ones of the plurality of magnetic domains, and each of the plurality of magnetic domains separated by a magnetic domain wall extending perpendicular to the extension direction of the magnetic fine wire.
3 more elements
A magnetic memory apparatus comprising:
- a spin orbit torque (SOT) source extending in a horizontal direction;
- a first electrode at one end of the SOT source and a second electrode at another end of the SOT source;
- a magnetic fine wire extending on the SOT source in a direction perpendicular to the horizontal direction;
- at least one of an insulating layer or a non-magnetic metal layer, the insulating layer or the non-magnetic metal layer on an upper end of the magnetic fine wire;
- a fixed layer on the insulating layer or the non-magnetic metal layer;
- a third electrode on the fixed layer;
- and
- controller circuitry electrically connected to the first electrode, the second electrode, and the third electrode, wherein
- the controller circuitry is configured to move a magnetic domain in the magnetic fine wire upward by flowing a current between the first electrode and the third electrode.
6 more elements
A magnetic memory apparatus comprising:
- a spin orbit torque (SOT) source configured to generate SOT;
- a magnetic fine wire on the SOT source;
- a first electrode and a second electrode, the first electrode and the second electrode configured to flow a current to the SOT source in a direction perpendicular to a direction of the SOT;
- a third electrode configured to flow a current to the magnetic fine wire in a direction parallel to a direction in which the magnetic fine wire extends;
- and
- controller circuitry connected to the first electrode, the second electrode, and the third electrode,
- wherein the controller circuitry is configured to flow a current between the first electrode and the third electrode during a magnetic domain moving operation.
4 more elements
Dependencies are inferred from the claim text.