G11C 2229/723
Redundancy information stored in a part of the memory core to be
Official title: Redundancy information stored in a part of the memory core to be repaired
G11C2229/723 (Redundancy information stored in a part of the memory core to be) appears on 34 US grants and 38 published applications in this corpus.
Search patents in G11C- Granted patents
- 34
- Published applications
- 38
- Assignees
- 23
- Inventors
- 65
- Latest grant
- 30 Aug 2022
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2000 | 1 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 0 |
| 2004 | 0 | 1 |
| 2005 | 0 | 0 |
| 2006 | 1 | 3 |
| 2007 | 3 | 5 |
| 2008 | 2 | 10 |
| 2009 | 6 | 2 |
| 2010 | 2 | 0 |
| 2011 | 3 | 5 |
| 2012 | 0 | 0 |
| 2013 | 4 | 2 |
| 2014 | 2 | 2 |
| 2015 | 2 | 3 |
| 2016 | 1 | 1 |
| 2017 | 3 | 0 |
| 2018 | 0 | 2 |
| 2019 | 2 | 1 |
| 2020 | 1 | 0 |
| 2021 | 0 | 1 |
| 2022 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Modifiable repair solutions for a memory array30 Aug 2022US 11,430,539 B2Micron Technology, Inc.
- DRAM device with embedded flash memory for redundancy and fabrication method thereof7 Jan 2020US 10,529,423 B2Fujian Jinhua Integrated Circuit Co., Ltd.
- Methods and apparatus for providing redundancy in memory15 Oct 2019US 10,446,258 B2Micron Technology, Inc.
- DRAM device with embedded flash memory for redundancy and fabrication method thereof6 Aug 2019US 10,373,683 B2Fujian Jinhua Integrated Circuit Co., Ltd.
- Methods for providing redundancy in a memory array comprising mapping portions of data associated with a defective address3 Oct 2017US 9,779,839 B2Micron Technology, Inc.
- Modifiable repair solutions for a memory array30 Dec 2021US 2021/0407615 A1Micron Technology, Inc.
- Dram device with embedded flash memory for redundancy and fabrication method thereof26 Sep 2019US 2019/0295645 A1Fujian Jinhua Integrated Circuit Co., Ltd.
- Dram device with embedded flash memory for redundancy and fabrication method thereof4 Oct 2018US 2018/0286481 A1Fujian Jinhua Integrated Circuit Co., Ltd.
- Methods and apparatus for providing redundancy in memory15 Feb 2018US 2018/0047460 A1Micron Technology, Inc.
- Methods and apparatus for providing redundancy in memory10 Mar 2016US 2016/0071619 A1Micron Technology, Inc.
Most cited
By later US patents
- Semiconductor memory device33US 7,110,294 B2Kabushiki Kaisha Toshiba · 2006
- Nonvolatile memory12US 7,197,613 B2Renesas Technology Corp. · 2007
- Memory system including flash memory and method of operating the same11US 7,826,263 B2Samsung Electronics Co., Ltd. · 2010
- Semiconductor nonvolatile memory trimming technique for output characteristic control and redundancy repair9US 7,551,488 B2Oki Semiconductor Co., Ltd. · 2009
- Storing operational information in an array of memory cells8US 8,437,217 B2Micron Technology, Inc. · 2013