G11C 2211/5646
Multilevel memory with flag bits
Official title: Multilevel memory with flag bits, e.g. for showing that a "first page" of a word line is programmed but not a "second page"
G11C2211/5646 (Multilevel memory with flag bits) appears on 202 US grants and 214 published applications in this corpus.
Search patents in G11C- Granted patents
- 202
- Published applications
- 214
- Assignees
- 58
- Inventors
- 278
- Latest grant
- 22 Jul 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2004 | 0 | 2 |
| 2005 | 1 | 4 |
| 2006 | 5 | 7 |
| 2007 | 5 | 9 |
| 2008 | 6 | 14 |
| 2009 | 11 | 15 |
| 2010 | 14 | 17 |
| 2011 | 13 | 15 |
| 2012 | 18 | 11 |
| 2013 | 14 | 16 |
| 2014 | 21 | 16 |
| 2015 | 10 | 10 |
| 2016 | 15 | 6 |
| 2017 | 4 | 5 |
| 2018 | 6 | 5 |
| 2019 | 10 | 18 |
| 2020 | 12 | 12 |
| 2021 | 11 | 11 |
| 2022 | 9 | 11 |
| 2023 | 8 | 2 |
| 2024 | 7 | 3 |
| 2025 | 2 | 4 |
| 2026 | 0 | 1 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Semiconductor memory with different threshold voltages of memory cells22 Jul 2025US 12,367,938 B2Kioxia Corporation
- Memory system24 Jun 2025US 12,340,124 B2Kioxia Corporation
- Nonvolatile memory and writing method24 Dec 2024US 12,176,027 B2Kioxia Corporation
- NAND temperature-aware operations24 Sep 2024US 12,099,748 B2Micron Technology, Inc.
- Nonvolatile memory device and memory system including nonvolatile memory device18 Jun 2024US 12,013,754 B2Samsung Electronics Co., Ltd.
- Boundary offset control for memory block reading16 Jul 2026US 2026/0204328 A1Micron Technology, Inc.
- Semiconductor memory with different threshold voltages of memory cells18 Dec 2025US 2025/0384937 A1Kioxia Corporation
- Memory system4 Sep 2025US 2025/0278216 A1Kioxia Corporation
- Method for writing in a phase change memory6 Mar 2025US 2025/0078925 A1STMicroelectronics International N. V.
- Nonvolatile memory and writing method27 Feb 2025US 2025/0069654 A1Kioxia Corporation
Most cited
By later US patents
- Non-volatile memory and control with improved partial page program capability116US 7,057,939 B2SanDisk Corporation · 2006
- Semiconductor memory device for storing multivalued data102US 7,016,226 B2Kabushiki Kaisha Toshiba · 2006
- Non-volatile semiconductor memory with large erase blocks storing cycle counts58US 6,944,063 B2Kabushiki Kaisha Toshiba · 2005
- Semiconductor memory device for storing multivalued data52US 7,120,052 B2Kabushiki Kaisha Toshiba · 2006
- System, semiconductor memory device and operating method thereof45US 9,058,900 B2SK hynix Inc. · 2015