G11C 2211/5643
Multilevel memory comprising cache storage devices
G11C2211/5643 (Multilevel memory comprising cache storage devices) appears on 225 US grants and 220 published applications in this corpus.
Search patents in G11C- Granted patents
- 225
- Published applications
- 220
- Assignees
- 52
- Inventors
- 229
- Latest grant
- 5 May 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1994 | 1 | 0 |
| 1995 | 1 | 0 |
| 1996 | 1 | 0 |
| 1997 | 2 | 0 |
| 1998 | 2 | 0 |
| 1999 | 7 | 0 |
| 2000 | 6 | 0 |
| 2001 | 3 | 4 |
| 2002 | 6 | 4 |
| 2003 | 3 | 19 |
| 2004 | 11 | 10 |
| 2005 | 9 | 4 |
| 2006 | 2 | 4 |
| 2007 | 8 | 15 |
| 2008 | 12 | 12 |
| 2009 | 11 | 10 |
| 2010 | 7 | 12 |
| 2011 | 13 | 11 |
| 2012 | 12 | 7 |
| 2013 | 13 | 6 |
| 2014 | 9 | 9 |
| 2015 | 8 | 5 |
| 2016 | 8 | 4 |
| 2017 | 2 | 4 |
| 2018 | 5 | 6 |
| 2019 | 3 | 2 |
| 2020 | 4 | 2 |
| 2021 | 6 | 12 |
| 2022 | 8 | 16 |
| 2023 | 9 | 14 |
| 2024 | 16 | 15 |
| 2025 | 13 | 9 |
| 2026 | 4 | 4 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Concurrent page cache resource access in a multi-plane memory device5 May 2026US 12,619,541 B2Micron Technology, Inc.
- Page buffer circuit and memory device including the same24 Mar 2026US 12,586,650 B2Samsung Electronics Co., Ltd.
- Memory device including page buffer circuit17 Feb 2026US 12,555,639 B2Samsung Electronics Co., Ltd.
- Memory device and program operation thereof20 Jan 2026US 12,530,125 B2Yangtze Memory Technologies Co., Ltd.
- Dual cache architecture and logical-to-physical mapping for a zoned random write area feature on zone namespace memory devices25 Nov 2025US 12,481,584 B2Micron Technology, Inc.
- Dual cache architecture and logical-to-physical mapping for a zoned random write area feature on zone namespace memory devices26 Feb 2026US 2026/0056881 A1Micron Technology, Inc.
- Memory devices and methods for operating the memory devices12 Feb 2026US 2026/0044283 A1Yangtze Memory Technologies Co., Ltd.
- Memory systems and operation methods thereof, memory controllers and memories5 Feb 2026US 2026/0037188 A1Yangtze Memory Technologies Co., Ltd.
- Execution of multiple programming operations using cache register release in a memory sub-system1 Jan 2026US 2026/0004850 A1Micron Technology, Inc.
- Dynamic single-level cell write through in memory devices4 Dec 2025US 2025/0370655 A1SK Hynix NAND Product Solutions Corp. (dba Solidigm)
Most cited
By later US patents
- Flash eeprom system602US 5,297,148 ASunDisk Corporation · 1994
- Flash EEprom system524US 5,602,987 ASanDisk Corporation · 1997
- Multi-state non-volatile flash memory capable of being its own two state write cache505US 5,930,167 ASanDisk Corporation · 1999
- Operation of a non-volatile memory array458US 7,924,628 B2Spansion Israel Ltd · 2011
- Flash EEPROM system with erase sector select437US 5,418,752 ASunDisk Corporation · 1995