G11C 2211/5621
Multilevel programming verification
G11C2211/5621 (Multilevel programming verification) appears on 1,503 US grants and 1,379 published applications in this corpus.
Search patents in G11C- Granted patents
- 1,503
- Published applications
- 1,379
- Assignees
- 137
- Inventors
- 1,258
- Latest grant
- 25 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1992 | 3 | 0 |
| 1993 | 1 | 0 |
| 1994 | 3 | 0 |
| 1995 | 9 | 0 |
| 1996 | 8 | 0 |
| 1997 | 16 | 0 |
| 1998 | 18 | 0 |
| 1999 | 30 | 0 |
| 2000 | 33 | 0 |
| 2001 | 30 | 18 |
| 2002 | 32 | 19 |
| 2003 | 16 | 34 |
| 2004 | 24 | 28 |
| 2005 | 23 | 29 |
| 2006 | 27 | 45 |
| 2007 | 41 | 87 |
| 2008 | 75 | 111 |
| 2009 | 91 | 100 |
| 2010 | 81 | 93 |
| 2011 | 101 | 84 |
| 2012 | 96 | 55 |
| 2013 | 76 | 39 |
| 2014 | 41 | 27 |
| 2015 | 34 | 24 |
| 2016 | 49 | 48 |
| 2017 | 44 | 36 |
| 2018 | 31 | 44 |
| 2019 | 57 | 63 |
| 2020 | 82 | 73 |
| 2021 | 80 | 81 |
| 2022 | 61 | 70 |
| 2023 | 57 | 75 |
| 2024 | 70 | 55 |
| 2025 | 51 | 24 |
| 2026 | 12 | 17 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Memory device, a memory system and an operation method25 Aug 2026US 12,717,474 B2Yangtze Memory Technologies Co., Ltd.
- Flash memory for reducing reliability degradation of OS data due to SMT process and method for operating the same25 Aug 2026US 12,717,494 B2Samsung Electronics Co., Ltd.
- Semiconductor memory device transitioning to standby mode in between two operations25 Aug 2026US 12,718,871 B2Kioxia Corporation
- Asymmetric pass through voltage for reduction of cell-to-cell interference11 Aug 2026US 12,704,969 B2Micron Technology, Inc.
- Method of detecting over-programming in a solid-state drive11 Aug 2026US 12,704,976 B2Microchip Technology Incorporated
- Early program termination for nand slc program9 Jul 2026US 2026/0196277 A1SanDisk Technologies LLC
- Semiconductor memory and nonvolatile memory2 Jul 2026US 2026/0188390 A1Kioxia Corporation
- Concurrent slow-fast memory cell programming25 Jun 2026US 2026/0179689 A1Micron Technology, Inc.
- Non-volatile memory with multiple sensngs25 Jun 2026US 2026/0179697 A1SanDisk Technologies LLC
- Combination single-level cell program modes to improve cell endurance18 Jun 2026US 2026/0171157 A1SanDisk Technologies LLC
Most cited
By later US patents
- Multi-state EEprom read and write circuits and techniques1,175US 5,172,338 ASunDisk Corporation · 1992
- Multi-state EEPROM having write-verify control circuit972US 5,570,315 AKabushiki Kaisha Toshiba · 1996
- Variable programming of non-volatile memory725US 7,020,017 B2SanDisk Corporation · 2006
- Non-volatile semiconductor memory device and method of programming a non-volatile memory cell to a predetermined state625US 5,774,397 AKabushiki Kaisha Toshiba · 1998
- Flash eeprom system602US 5,297,148 ASunDisk Corporation · 1994