Non-volatile memory with multiple sensngs

A non-volatile storage apparatus, comprising:

• non-volatile memory cells;
• and
• a control circuit connected to the non-volatile memory cells, the control circuit is configured to program the non-volatile memory cells into a set of data states defined by current distributions when applying a common voltage to the memory cells, the control circuit is configured to perform a sensing process for the memory cells by sensing the same memory cells an odd number of times greater than one to achieve multiple results for determining whether the memory cells are in a particular condition in response to a same reference signal without adjusting the memory cells between the multiple times and determining whether the memory cells are in the particular condition based on a majority of the multiple results.

A method comprising:

• separately programming at different times to a particular condition a plurality of non-volatile memory cells connected to a bit line, the programming includes separately performing program-verify at different times for the plurality of non-volatile memory cells, performing program-verify comprises sensing the same non-volatile memory cell multiple times to achieve multiple results for determining whether the non-volatile memory cell is in a particular condition in response to a same reference signal without adjusting the non-volatile memory cell between the multiple times and determining whether the non-volatile memory cell is in the particular condition based on a majority of the multiple results;
• and
• concurrently reading the plurality of non-volatile memory cells by sensing output current from the first bit line while the first bit line is receiving current from multiple non-volatile memory cells of the plurality of non-volatile memory cells.