G11C 2211/5615
Multilevel magnetic memory cell using non-magnetic non-conducting interlayer
Official title: Multilevel magnetic memory cell using non-magnetic non-conducting interlayer, e.g. MTJ
G11C2211/5615 (Multilevel magnetic memory cell using non-magnetic non-conducting interlayer) appears on 96 US grants and 91 published applications in this corpus.
Search patents in G11C- Granted patents
- 96
- Published applications
- 91
- Assignees
- 35
- Inventors
- 185
- Latest grant
- 16 Jun 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1998 | 4 | 0 |
| 1999 | 7 | 0 |
| 2000 | 2 | 0 |
| 2001 | 2 | 0 |
| 2002 | 1 | 2 |
| 2003 | 2 | 1 |
| 2004 | 3 | 3 |
| 2005 | 4 | 4 |
| 2006 | 3 | 3 |
| 2007 | 1 | 1 |
| 2008 | 1 | 0 |
| 2009 | 0 | 2 |
| 2010 | 1 | 2 |
| 2011 | 1 | 1 |
| 2012 | 0 | 3 |
| 2013 | 3 | 4 |
| 2014 | 7 | 3 |
| 2015 | 1 | 3 |
| 2016 | 3 | 2 |
| 2017 | 2 | 7 |
| 2018 | 4 | 6 |
| 2019 | 10 | 12 |
| 2020 | 8 | 10 |
| 2021 | 11 | 9 |
| 2022 | 4 | 0 |
| 2023 | 2 | 3 |
| 2024 | 5 | 6 |
| 2025 | 2 | 4 |
| 2026 | 2 | 0 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor device, method of fabricating semiconductor device, and semiconductor structure having semiconductor device16 Jun 2026US 12,660,203 B2Taiwan Semiconductor Manufacturing Company.Ltd
- MRAM device with annular electrodes31 Mar 2026US 12,593,614 B2International Business Machines Corporation
- Semiconductor device and method for fabricating the same26 Aug 2025US 12,402,540 B2United Microelectronics Corp.
- Semiconductor device and method for fabricating the same25 Mar 2025US 12,262,647 B2United Microelectronics Corp.
- Back-side memory element with local memory select transistor10 Dec 2024US 12,167,612 B2International Business Machines Corporation
- Semiconductor device and method for fabricating the same6 Nov 2025US 2025/0344611 A1United Microelectronics Corp.
- Topological Racetrack Memory having Multi-bits Storage Capability Each Unit Cell for In-memory Computing in Artificial Intelligent Inference Device30 Oct 2025US 2025/0338504 A1Aurora Micro Devices LLC
- Semiconductor device and method for fabricating the same12 Jun 2025US 2025/0194436 A1United Microelectronics Corp.
- Storage device20 Mar 2025US 2025/0095729 A1Kioxia Corporation
- Method for fabricating semiconductor device10 Oct 2024US 2024/0341102 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Low switching field magnetoresistive tunneling junction for high density arrays186US 5,966,323 AMotorola, Inc. · 1999
- Magneto-resistance effect element, magneto-resistance effect memory cell, MRAM and method for performing information write to or read from the magneto-resistance effect memory cell138US 6,436,526 B1Matsushita Electric Industrial Co., Ltd. · 2002
- Multi-layer magnetic tunneling junction memory cells134US 5,734,605 AMotorola, Inc. · 1998
- Magnetic memory elements using 360° walls131US 6,906,369 B2Massachusetts Institute of Technology · 2005
- Magnetic memory unit having four states and operating method thereof92US 5,930,164 AMotorola, Inc. · 1999