Storage device

A storage device comprising:

• a first wiring extending in a first direction;
• a second wiring extending in a second direction intersecting the first direction;
• a memory cell provided between the first wiring and the second wiring, the memory cell including a resistance change storage element configured in a first resistance state or a second resistance state, and a selector connected in series to the resistance change storage element and configured to shift from off-state to on-state when voltage higher than a first threshold voltage is applied, the memory cell configured to store data based on a resistance state of the resistance change storage element;
• a switching element configured to input a first signal from the second wiring and output a second signal to a third wiring different from the first wiring and the second wiring;
• a voltage application circuit configured to apply a first voltage to the first wiring at a first time point such that a voltage higher than the first threshold voltage is applied to the selector;
• and
• a determination circuit configured to determine the resistance state of the resistance change storage element based on the second signal output to the third wiring at a second time point after the first time point.