Method for fabricating semiconductor device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsALEXANDER KALNITSKY, HARRY-HAK-LAY CHUANG, SHENG-HAUNG HUANG, TIEN-WEI CHIANG
Life of this patent
Estimating the term…
Abstract
The present disclosure provides a method for fabricating a semiconductor device. The method includes the operations below. A magnetic tunneling junction (MTJ) is formed on a substrate. A first dielectric layer is formed around the MTJ. A first metal interconnection is formed adjacent to the MTJ. A second dielectric layer is formed over the first dielectric layer. The second dielectric layer is removed to form an opening. A metal line is formed in the opening to electrically connect the MTJ and the first metal interconnection.
Claims20
A method for fabricating a semiconductor device, the method comprising:
- forming a magnetic tunneling junction (MTJ) on a substrate;
- forming a first dielectric layer around the MTJ;
- forming a first metal interconnection adjacent to the MTJ;
- forming a second dielectric layer over the first dielectric layer;
- removing the second dielectric layer to form an opening;
- and
- forming a metal line in the opening to electrically connect the MTJ and the first metal interconnection.
A method for fabricating a semiconductor device, the method comprising:
- forming a transistor region over a substrate, the transistor region comprising a gate and a first doped region;
- forming a magnetic tunneling junction (MTJ) directly over the first doped region and electrically coupling to the transistor region;
- forming a first dielectric layer around the MTJ;
- forming a first metal interconnection adjacent to the MTJ, wherein the first metal interconnection is directly over the gate and electrically coupling to the gate;
- forming a first IMD layer over the first dielectric layer;
- forming a plurality of conductive vias in the first dielectric layer;
- and
- forming a metal line over the plurality of conductive vias to electrically connect the MTJ and the first metal interconnection.
A method for fabricating a semiconductor device, the method comprising:
- forming a transistor region over a substrate, the transistor region comprising a gate and a first doped region;
- forming a magnetic tunneling junction (MTJ) directly over the gate and electrically coupling to the gate;
- forming a first dielectric layer around the MTJ;
- forming a first metal interconnection adjacent to the MTJ, wherein the first metal interconnection is directly over the first doped region and electrically coupling to the first doped region;
- forming a first IMD layer over the first dielectric layer;
- forming a plurality of conductive vias in the first dielectric layer;
- and
- forming a metal line over the plurality of conductive vias to electrically connect the MTJ and the first metal interconnection.
Dependencies are inferred from the claim text.