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AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsAlexander Kalnitsky, Harry-Hak-Lay Chuang, Sheng-Haung Huang, Tien-Wei Chiang
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The present disclosure provides a semiconductor device. The semiconductor device includes a plurality of doped regions located in a substrate; a first dielectric layer located on the substrate; a plurality of first contacts and second contacts located in the first dielectric layer and connected to the plurality of doped regions; a second dielectric layer located on the first dielectric layer; a memory element located in the second dielectric layer, the memory element being electrically connected to the second contact; and a plurality of conductive interconnects located in the second dielectric layer. The conductive interconnects being electrically connected to the plurality of first contacts, and a top surface of the conductive interconnects being at a same level as a top surface of the memory element. A method of fabricating a semiconductor device, and a semiconductor structure having a semiconductor device are also provided.
A semiconductor device, comprising:
A semiconductor structure, comprising:
A semiconductor structure, comprising:
Dependencies are inferred from the claim text.