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US 12,262,647 B2Granted
Semiconductor device and method for fabricating the same
AssigneeUnited Microelectronics Corp.
InventorsHui-Lin Wang, Chen-Yi Weng, Yi-Wei Tseng, Chin-Yang Hsieh, Jing-Yin Jhang, Yi-Hui Lee, Ying-Cheng Liu, Yi-An Shih, I-Ming Tseng, Yu-Ping Wang
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Abstract
A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a spacer adjacent to the MTJ, a liner adjacent to the spacer, and a first metal interconnection on the MTJ. Preferably, the first metal interconnection includes protrusions adjacent to two sides of the MTJ and a bottom surface of the protrusions contact the liner directly.
Claims5
A semiconductor device, comprising:
- a magnetic tunneling junction (MTJ) on a substrate, wherein a top surface of the MTJ comprises a reverse V-shape;
- a spacer adjacent to and directly contacting the MTJ;
- a liner adjacent to the spacer;
- and
- a first metal interconnection on the MTJ, wherein the first metal interconnection comprises protrusions adjacent to two sides of the MTJ, a bottom surface of the protrusions contact the liner directly, and a width of the spacer directly contacting the protrusions is less than a width of the liner directly contacting the protrusions.
2 more elements
Dependencies are inferred from the claim text.