G11C 17/146
Write once memory, i.e. allowing changing of memory content by writing additional
Official title: {Write once memory, i.e. allowing changing of memory content by writing additional bits}
G11C17/146 (Write once memory, i.e. allowing changing of memory content by writing additional) appears on 94 US grants and 90 published applications in this corpus.
Search patents in G11C- Granted patents
- 94
- Published applications
- 90
- Assignees
- 58
- Inventors
- 204
- Latest grant
- 9 Dec 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
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| 2001 | 1 | 0 |
| 2002 | 0 | 1 |
| 2003 | 1 | 2 |
| 2004 | 0 | 0 |
| 2005 | 2 | 1 |
| 2006 | 4 | 7 |
| 2007 | 4 | 2 |
| 2008 | 2 | 2 |
| 2009 | 3 | 5 |
| 2010 | 0 | 5 |
| 2011 | 4 | 3 |
| 2012 | 5 | 3 |
| 2013 | 4 | 3 |
| 2014 | 6 | 8 |
| 2015 | 8 | 7 |
| 2016 | 13 | 8 |
| 2017 | 4 | 5 |
| 2018 | 2 | 1 |
| 2019 | 5 | 6 |
| 2020 | 5 | 8 |
| 2021 | 7 | 2 |
| 2022 | 5 | 2 |
| 2023 | 2 | 3 |
| 2024 | 2 | 1 |
| 2025 | 2 | 1 |
| 2026 | 0 | 4 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Controlling trap formation to improve memory window in one-time program devices9 Dec 2025US 12,495,547 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Verifiable one-time programmable memory device15 Apr 2025US 12,277,982 B2Telefonaktiebolaget LM Ericsson (publ)
- Low resistance MTJ antifuse circuitry designs and methods of operation12 Nov 2024US 12,142,309 B2Everspin Technologies, Inc.
- One-time programmable (OTP) memory device and method of operating an OTP memory device23 Jan 2024US 11,882,696 B2Samsung Electronics Co., Ltd.
- Non-volatile memory devices and systems with volatile memory features and methods for operating the same29 Aug 2023US 11,742,028 B2Micron Technology, Inc.
- Read-only memory with one-transistor read-only memory cells and method for writing read-only memory code with bit line load optimization into read-only memory7 May 2026US 2026/0128109 A1Mediatek Inc.
- Otp memory device and otp memory cell having multiple program transistors23 Apr 2026US 2026/0112431 A1Samsung Electronics Co., Ltd.
- Semiconductor storage device, printing head, and data writing method23 Apr 2026US 2026/0112432 A1Canon Kabushiki Kaisha
- Controlling trap formation to improve memory window in one-time prograrm devices12 Mar 2026US 2026/0075813 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Low resistance mtj antifuse circuitry designs and methods of operation23 Jan 2025US 2025/0029645 A1Everspin Technologies, Inc.
Most cited
By later US patents
- Nanocrystal write once read only memory for archival storage96US 6,888,739 B2Micron Technology, Inc. · 2005
- Write-once thin-film memory90US 6,324,093 B1Hewlett-Packard Company · 2001
- Multiple writes per a single erase for a nonvolatile memory77US 5,936,884 AIntel Corporation · 1999
- OTP antifuse cell and cell array62US 7,102,951 B2Intel Corporation · 2006
- Low-pin-count non-volatile memory embedded in a integrated circuit without any additional pins for access52US 8,923,085 B22014