G11C 16/3495
Circuits or methods to detect or delay wearout of nonvolatile eprom or
Official title: {Circuits or methods to detect or delay wearout of nonvolatile EPROM or EEPROM memory devices, e.g. by counting numbers of erase or reprogram cycles, by using multiple memory areas serially or cyclically}
G11C16/3495 (Circuits or methods to detect or delay wearout of nonvolatile eprom or) appears on 1,139 US grants and 1,150 published applications in this corpus.
Search patents in G11C- Granted patents
- 1,139
- Published applications
- 1,150
- Assignees
- 215
- Inventors
- 1,683
- Latest grant
- 8 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1987 | 1 | 0 |
| 1988 | 2 | 0 |
| 1989 | 1 | 0 |
| 1990 | 1 | 0 |
| 1991 | 1 | 0 |
| 1992 | 3 | 0 |
| 1993 | 6 | 0 |
| 1994 | 3 | 0 |
| 1995 | 4 | 0 |
| 1996 | 14 | 0 |
| 1997 | 4 | 0 |
| 1998 | 8 | 0 |
| 1999 | 11 | 0 |
| 2000 | 7 | 0 |
| 2001 | 10 | 1 |
| 2002 | 4 | 4 |
| 2003 | 5 | 2 |
| 2004 | 1 | 10 |
| 2005 | 8 | 10 |
| 2006 | 5 | 10 |
| 2007 | 6 | 20 |
| 2008 | 14 | 20 |
| 2009 | 10 | 16 |
| 2010 | 10 | 23 |
| 2011 | 26 | 22 |
| 2012 | 22 | 37 |
| 2013 | 30 | 36 |
| 2014 | 44 | 61 |
| 2015 | 47 | 47 |
| 2016 | 73 | 70 |
| 2017 | 69 | 74 |
| 2018 | 75 | 70 |
| 2019 | 79 | 84 |
| 2020 | 101 | 118 |
| 2021 | 107 | 87 |
| 2022 | 92 | 100 |
| 2023 | 99 | 77 |
| 2024 | 69 | 63 |
| 2025 | 43 | 43 |
| 2026 | 24 | 45 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Lifetime mixed level non-volatile memory system8 Sep 2026US 12,731,638 B2Vervain, LLC
- Techniques for managing a voltage recovery operation1 Sep 2026US 12,725,669 B2Micron Technology, Inc.
- Selective data pattern write scrub for a memory system18 Aug 2026US 12,712,037 B2Micron Technology, Inc.
- Data storage device having a memory block failure anticipation system11 Aug 2026US 12,706,169 B2SanDisk Technologies LLC
- Device providing improved fail bit count operation21 Jul 2026US 12,688,899 B2Samsung Electronics Co., Ltd.
- Nand detect empty page scan1 Oct 2026US 2026/0301822 A1Micron Technology, Inc.
- Accelerating program-erase cycles on memory devices24 Sep 2026US 2026/0288604 A1Micron Technology, Inc.
- Non-volatile memory with dynamic source voltage17 Sep 2026US 2026/0279476 A1SanDisk Technologies LLC
- Memory device and method of reading memory device10 Sep 2026US 2026/0268984 A1SK hynix Inc.
- Control method for storage device, storage device, and electronic device10 Sep 2026US 2026/0268990 A1Shanghai Longsys Digital Technology Co., Limited
Most cited
By later US patents
- Multi-state memory1,008US 6,222,762 B1SanDisk Corporation · 2001
- Highly compact EPROM and flash EEPROM devices819US 5,095,344 A1992
- Flash EEPROM memory systems having multistate storage cells579US 5,043,940 A1991
- Wear leveling techniques for flash EEPROM systems553US 6,230,233 B1SanDisk Corporation · 2001
- Flash memory mass storage architecture incorporating wear leveling technique without using cam cells376US 5,485,595 ACirrus Logic, Inc. · 1996