Selective data pattern write scrub for a memory system
AssigneeMicron Technology, Inc.
InventorsZhongguang Xu, Murong Lang, Zhenming Zhou
Life of this patent
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Abstract
A system includes a memory device having a plurality of memory cells and a processing device operatively coupled to the memory device. The processing device is to determine to perform a rewrite on at least a portion of the plurality of memory cells. The processing device can determine that a number of rewrite operations at first subset of memory cells storing a first logic state fail to satisfy a threshold criterion. The processing device can also cause a rewrite of data stored at a second subset of memory cells storing a second logic state in response to determining the number of rewrite operations performed at the first subset of memory cells fail to satisfy the threshold criterion.
Claims18
A system comprising:
- a memory device comprising a plurality of memory cells, wherein a first subset of the plurality of memory cells store a first logic state and a second subset of the plurality of memory cells store a second logic state;
- and
- a processing device operatively coupled to the memory device, the processing device to perform operations comprising:
- determining to perform a rewrite operation on at least a portion of the plurality of memory cells;
- determining a threshold criterion based on a maximum operational voltage of the plurality of memory cells, wherein the threshold criterion comprises a number of scrub cycles for which the processing device is to refrain from rewriting data stored at the first subset of the plurality of memory cells;
- determining that a number of rewrite operations performed at the second subset of the plurality of memory cells fail to satisfy the threshold criterion based on comparing the number of rewrite operations performed to the threshold criterion;
- and
- responsive to determining that the number of rewrite operations performed at the second subset of the plurality of memory cells fail to satisfy the threshold criterion, causing a rewrite of data stored at the second subset of the plurality of memory cells while refraining from rewriting data stored at the first subset of the plurality of memory cells.
A method comprising:
- determining, by a processing device, to perform a rewrite operation on at least a portion of a plurality of memory cells of a memory device, wherein a first subset of the plurality of memory cells store a first logic state and a second subset of the plurality of memory cells store a second logic state;
- determining a threshold criterion based on a maximum operational voltage of the plurality of memory cells, wherein the threshold criterion comprises a number of scrub cycles for which the processing device is to refrain from rewriting data stored at the first subset of the plurality of memory cells;
- determining that a number of rewrite operations performed at the second subset of the plurality of memory cells fail to satisfy the threshold criterion based on comparing the number of rewrite operations performed to the threshold criterion;
- and
- responsive to determining that the number of rewrite operations performed at the second subset of the plurality of memory cells fail to satisfy the threshold criterion, causing a rewrite of data stored at the second subset of the plurality of memory cells while refraining from rewriting data stored at the first subset of the plurality of memory cells.
A non-transitory computer-readable medium storing instructions, which when executed by a processing device that is operatively coupled with a memory device, performing a plurality of operations comprising:
- determining to perform a rewrite operation on at least a portion of a plurality of memory cells of a memory device, wherein a first subset of the plurality of memory cells store a first logic state and a second subset of the plurality of memory cells store a second logic state;
- determining a threshold criterion based on a maximum operational voltage of the plurality of memory cells, wherein the threshold criterion comprises a number of scrub cycles for which the processing device is to refrain from rewriting data stored at the first subset of the plurality of memory cells;
- determining that a number of rewrite operations performed at the second subset of the plurality of memory cells fail to satisfy the threshold criterion based on comparing the number of rewrite operations performed to the threshold criterion;
- and
- responsive to determining that the number of rewrite operations performed at the second subset of the plurality of memory cells fail to satisfy the threshold criterion, causing a rewrite of data stored at the second subset of the plurality of memory cells while refraining from rewriting data stored at the first subset of the plurality of memory cells.
Dependencies are inferred from the claim text.