G11C 14/0072
And the nonvolatile element is a ferroelectric element
Official title: {and the nonvolatile element is a ferroelectric element}
G11C14/0072 (And the nonvolatile element is a ferroelectric element) appears on 95 US grants and 89 published applications in this corpus.
Search patents in G11C- Granted patents
- 95
- Published applications
- 89
- Assignees
- 53
- Inventors
- 180
- Latest grant
- 12 May 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1989 | 2 | 0 |
| 1990 | 3 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 2 | 0 |
| 1996 | 0 | 0 |
| 1997 | 1 | 0 |
| 1998 | 1 | 0 |
| 1999 | 0 | 0 |
| 2000 | 2 | 0 |
| 2001 | 2 | 0 |
| 2002 | 1 | 2 |
| 2003 | 4 | 3 |
| 2004 | 4 | 9 |
| 2005 | 8 | 6 |
| 2006 | 3 | 0 |
| 2007 | 1 | 0 |
| 2008 | 1 | 0 |
| 2009 | 0 | 1 |
| 2010 | 1 | 1 |
| 2011 | 1 | 1 |
| 2012 | 0 | 1 |
| 2013 | 1 | 4 |
| 2014 | 4 | 3 |
| 2015 | 3 | 0 |
| 2016 | 3 | 8 |
| 2017 | 5 | 2 |
| 2018 | 6 | 5 |
| 2019 | 4 | 11 |
| 2020 | 8 | 4 |
| 2021 | 5 | 7 |
| 2022 | 3 | 4 |
| 2023 | 3 | 6 |
| 2024 | 6 | 5 |
| 2025 | 4 | 2 |
| 2026 | 3 | 4 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Method for manufacturing SRAM memory circuit12 May 2026US 12,626,746 B2National Yang Ming.Chiao Tung University
- Semiconductor device and electronic device21 Apr 2026US 12,610,553 B2Semiconductor Energy Laboratory Co.Ltd.
- Semiconductor circuit, driving method, and electronic apparatus27 Jan 2026US 12,537,056 B2Sony Semiconductor Solutions Corporation
- SRAM memory cell device comprising ferroelectric access and storage transistors8 Jul 2025US 12,356,600 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Non-volatile ferroelectric storage element and devices comprising them24 Jun 2025US 12,342,547 B2Tokyo Institute of Technology
- Method for manufacturing sram memory circuit20 Aug 2026US 2026/0245607 A1National Yang Ming.Chiao Tung University
- Storage device6 Aug 2026US 2026/0229286 A1Sony Semiconductor Solutions Corporation
- Charge-domain sensing architectures for content-addressable memory23 Jul 2026US 2026/0212926 A1University of Notre Dame du Lac
- Semiconductor device and electronic device23 Jul 2026US 2026/0214908 A1Semiconductor Energy Laboratory Co.Ltd.
- Semiconductor circuit, driving method, and electronic apparatus1 May 2025US 2025/0140314 A1Sony Semiconductor Solutions Corporation
Most cited
By later US patents
- Memory cell with volatile and non-volatile portions having ferroelectric capacitors229US 4,809,225 ARamtron Corporation · 1989
- Data storage device and method of using a ferroelectric capacitance divider174US 4,853,893 ARamtron Corporation · 1989
- Ferroelectric memory cell without a plate line61US 9,812,204 B1AUCMOS Technologies USA, Inc. · 2017
- Ferroelectric non-volatile latch circuits58US 6,141,237 ARamtron International Corporation · 2000
- One transistor memory cell with programmable capacitance divider56US 4,914,627 ARamtron Corporation · 1990