G11C 14/0054
In which the volatile element is a sram cell
Official title: {in which the volatile element is a SRAM cell}
G11C14/0054 (In which the volatile element is a sram cell) appears on 704 US grants and 691 published applications in this corpus.
Search patents in G11C- Granted patents
- 704
- Published applications
- 691
- Assignees
- 226
- Inventors
- 955
- Latest grant
- 8 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1985 | 1 | 0 |
| 1986 | 0 | 0 |
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 3 | 0 |
| 1990 | 3 | 0 |
| 1991 | 1 | 0 |
| 1992 | 1 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 3 | 0 |
| 1996 | 0 | 0 |
| 1997 | 2 | 0 |
| 1998 | 1 | 0 |
| 1999 | 1 | 0 |
| 2000 | 6 | 0 |
| 2001 | 6 | 0 |
| 2002 | 4 | 4 |
| 2003 | 6 | 3 |
| 2004 | 4 | 12 |
| 2005 | 12 | 19 |
| 2006 | 16 | 14 |
| 2007 | 9 | 12 |
| 2008 | 16 | 16 |
| 2009 | 11 | 12 |
| 2010 | 11 | 11 |
| 2011 | 13 | 20 |
| 2012 | 17 | 28 |
| 2013 | 18 | 39 |
| 2014 | 40 | 77 |
| 2015 | 60 | 58 |
| 2016 | 65 | 61 |
| 2017 | 83 | 53 |
| 2018 | 48 | 41 |
| 2019 | 56 | 55 |
| 2020 | 58 | 47 |
| 2021 | 39 | 31 |
| 2022 | 29 | 22 |
| 2023 | 15 | 20 |
| 2024 | 25 | 12 |
| 2025 | 11 | 13 |
| 2026 | 9 | 11 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
- G11C 14/009And the nonvolatile element is a resistive ram element, i.e. programmable resistors253
- G11C 14/0081And the nonvolatile element is a magnetic ram [mram] element or ferromagnetic218
- G11C 14/0063And the nonvolatile element is an eeprom element171
- G11C 14/0072And the nonvolatile element is a ferroelectric element95
Recent patents
- Logic drive using standard commodity programmable logic IC chips comprising non-volatile random access memory cells8 Sep 2026US 12,732,193 B2iCometrue Company Ltd.
- Logic drive using standard commodity programmable logic IC chips comprising non-volatile random access memory cells1 Sep 2026US 12,726,202 B2iCometrue Company Ltd.
- Memory circuit with memory cells having bistable circuit and non-volatile element25 Aug 2026US 12,718,873 B2Japan Science and Technology Agency
- Logic drive using standard commodity programmable logic IC chips comprising non-volatile random access memory cells9 Jun 2026US 12,652,052 B2
- Logic drive using standard commodity programmable logic IC chips comprising non-volatile random access memory cells19 May 2026US 12,633,926 B2iCometrue Company Ltd.
- Logic drive using standard commodity programmable logic ic chips comprising non-volatile random access memory cells1 Oct 2026US 2026/0303097 A1iCometrue Company Ltd.
- Method for manufacturing sram memory circuit20 Aug 2026US 2026/0245607 A1National Yang Ming.Chiao Tung University
- Storage device6 Aug 2026US 2026/0229286 A1Sony Semiconductor Solutions Corporation
- Charge-domain sensing architectures for content-addressable memory23 Jul 2026US 2026/0212926 A1University of Notre Dame du Lac
- Semiconductor device and electronic device23 Jul 2026US 2026/0214908 A1Semiconductor Energy Laboratory Co.Ltd.
Most cited
By later US patents
- NVRAM memory cell architecture that integrates conventional SRAM and flash cells363US 7,164,608 B2Aplus Flash Technology, Inc. · 2007
- Memory cell with volatile and non-volatile portions having ferroelectric capacitors229US 4,809,225 ARamtron Corporation · 1989
- Data storage device and method of using a ferroelectric capacitance divider174US 4,853,893 ARamtron Corporation · 1989
- Spintronic devices with integrated transistors107US 8,004,882 B2Micron Technology, Inc. · 2011
- Phase change resistor cell and nonvolatile memory device using the same106US 7,038,938 B2Hynix Semiconductor Inc. · 2006