Phase change resistor cell and nonvolatile memory device using the same
AssigneeHynix Semiconductor Inc.
InventorHee Bok Kang
Life of this patent
Estimating the term…
Abstract
A nonvolatile memory device features a phase change resistor cell. More specifically, a phase change resistor and a hybrid switch which does not require an additional gate control signal are used to embody rapid nonvolatile SRAM characteristics. In the nonvolatile memory device, a cell plate is connected to a top electrode of a nonvolatile resistor memory device whose resistance state is changed by current values, and the hybrid switch is connected between a flip-flop and a bottom electrode of the nonvolatile resistor memory device, thereby improving characteristics of the rapid nonvolatile memory.
Claims22
A phase change resistor cell comprising:
- a plurality of phase change resistors for storing at least one or more of data corresponding to a crystallization state changed by current applied from a cell plate line;
- a plurality of hybrid switches connected one by one to the plurality of phase change resistors, and selectively switched depending on voltages applied to the cell plate line and a bit line;
- and
- a storage means, connected to the plurality of hybrid switches, for storing different nonvolatile data through input/output terminals.
A nonvolatile memory device using a phase change resistor cell, comprising:
- a plurality of phase change resistor cell arrays each comprising a plurality of unit phase change resistor cells arranged in row and column directions;
- and
- a plurality of sense amplifiers for sensing and amplifying data applied from the plurality of phase change resistor cell arrays,
- wherein each of the plurality of unit phase change resistor cells comprises:
- a plurality of phase change resistors for storing at least one or more of data corresponding to a crystallization state changed by current applied from a cell plate line;
- a plurality of hybrid switches connected one by one to the plurality of phase change resistors, and selectively switched depending on voltages applied to the cell plate line and a bit line;
- and
- a storage means, connected to the plurality of hybrid switches, for storing different nonvolatile data through nodes of both terminals.
Dependencies are inferred from the claim text.