Semiconductor device and electronic device

A semiconductor device comprising:

• a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a sixth transistor, a seventh transistor, a first FTJ element, a second FTJ element, and a capacitor,
• wherein one of a source and a drain of the first transistor is electrically connected to a first wiring,
• wherein the other of the source and the drain of the first transistor is electrically connected to a gate of the fourth transistor,
• wherein a gate of the first transistor is electrically connected to a gate of the second transistor,
• wherein one of a source and a drain of the second transistor is electrically connected to a second wiring,
• wherein the other of the source and the drain of the second transistor is electrically connected to a gate of the third transistor and a first electrode of the capacitor,
• wherein one of a source and a drain of the third transistor is electrically connected to the gate of the fourth transistor,
• wherein the other of the source and the drain of the third transistor is electrically connected to a third wiring,
• wherein one of a source and a drain of the fourth transistor is electrically connected to the gate of the third transistor and the first electrode of the capacitor,
• wherein the other of the source and the drain of the fourth transistor is electrically connected to the third wiring,
• wherein one of a source and a drain of the fifth transistor is electrically connected to one of a source and a drain of the sixth transistor,
• wherein the other of the source and the drain of the fifth transistor is electrically connected to a fourth wiring,
• wherein a gate of the fifth transistor is electrically connected to a second electrode of the capacitor,
• wherein the other of the source and the drain of the sixth transistor is electrically connected to a fifth wiring,
• wherein one of a source and a drain of the seventh transistor is electrically connected to the gate of the fifth transistor and the second electrode of the capacitor,
• wherein an input terminal of the first FTJ element is electrically connected to an input terminal of the second FTJ element,
• wherein an output terminal of the first FTJ element is electrically connected to the gate of the fourth transistor, and
• wherein an output terminal of the second FTJ element is electrically connected to the gate of the third transistor and the first electrode of the capacitor.