G11C 14/0027
And the nonvolatile element is a ferroelectric element
Official title: {and the nonvolatile element is a ferroelectric element}
G11C14/0027 (And the nonvolatile element is a ferroelectric element) appears on 80 US grants and 75 published applications in this corpus.
Search patents in G11C- Granted patents
- 80
- Published applications
- 75
- Assignees
- 14
- Inventors
- 72
- Latest grant
- 12 May 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2011 | 0 | 1 |
| 2012 | 0 | 0 |
| 2013 | 0 | 1 |
| 2014 | 2 | 2 |
| 2015 | 1 | 3 |
| 2016 | 3 | 2 |
| 2017 | 4 | 6 |
| 2018 | 7 | 6 |
| 2019 | 8 | 15 |
| 2020 | 11 | 14 |
| 2021 | 10 | 9 |
| 2022 | 8 | 4 |
| 2023 | 15 | 7 |
| 2024 | 5 | 1 |
| 2025 | 5 | 2 |
| 2026 | 1 | 2 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Manganese or scandium doped ferroelectric device and bit-cell12 May 2026US 12,628,350 B2Kepler Computing Inc.
- High-density low voltage non-volatile memory with unidirectional plate-line and bit-line and pillar capacitor28 Oct 2025US 12,457,752 B2Kepler Computing Inc.
- Multiply operation circuit, multiply and accumulate circuit, and methods thereof15 Jul 2025US 12,360,741 B2Ferroelectric Memory GmbH
- Dual-precision analog memory cell and array18 Feb 2025US 12,230,309 B2Hefei Reliance Memory Limited
- Semiconductor device and electronic device18 Feb 2025US 12,230,358 B2Semiconductor Energy Laboratory Co.Ltd.
- Semiconductor device3 Sep 2026US 2026/0262261 A1Semiconductor Energy Laboratory Co.Ltd.
- Memory devices26 Feb 2026US 2026/0057936 A1Samsung Electronics Co., Ltd.
- Dual-precision analog memory cell and array22 May 2025US 2025/0166686 A1Hefei Reliance Memory Limited
- Semiconductor Memory Having Both Volatile and Non-Volatile Functionality Comprising Resistive Change Material and Method of Operating20 Feb 2025US 2025/0061945 A1Zeno Semiconductor, Inc.
- Dual-precision analog memory cell and array28 Mar 2024US 2024/0105247 A1Hefei Reliance Memory Limited
Most cited
By later US patents
- Semiconductor memory having both volatile and non-volatile functionality comprising resistive change material and method of operating106US 9,025,358 B2Zeno Semiconductor, Inc. · 2015
- High-density low voltage non-volatile differential memory bit-cell with shared plate line76US 10,847,201 B2Kepler Computing Inc. · 2020
- Semiconductor memory having both volatile and non-volatile functionality comprising resistive change material and method of operating75US 9,401,206 B2Zeno Semiconductor, Inc. · 2016
- Semiconductor memory having both volatile and non-volatile functionality comprising resistive change material and method of operating69US 9,666,275 B2Zeno Semiconductor, Inc. · 2017
- Semiconductor memory having both volatile and non-volatile functionality comprising resistive change material and method of operating59US 9,922,711 B2Zeno Semiconductor, Inc. · 2018