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US 9,401,206 B2Granted
Semiconductor memory having both volatile and non-volatile functionality comprising resistive change material and method of operating
AssigneeZeno Semiconductor, Inc.
InventorYuniarto Widjaja
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Abstract
A semiconductor memory cell including a capacitorless transistor having a floating body configured to store data as charge therein when power is applied to the cell, and a non-volatile memory including a bipolar resistive change element, and methods of operating.
Claims20
A semiconductor memory array comprising:
- a plurality of memory cells arranged in a matrix of rows and columns, wherein at least two of said memory cells each include:
- a capacitorless transistor having a floating body configured to store data as charge therein when power is applied to said memory cell;
- and
- a nonvolatile memory comprising a bipolar resistive change element configured to store data stored in said floating body upon transfer thereto;
- wherein said floating body has a first conductivity type selected from n-type conductivity type and p-type conductivity type;
- said memory cell further comprising first and second regions at first and second locations of said memory cell, said first and second regions each having a second conductivity type selected from said n-type conductivity type and said p-type conductivity type and being different from said first conductivity type;
- wherein said transfer is performed to said at least two of said memory cells in parallel.
4 more elements
An integrated circuit comprising:
- a plurality of memory cells arranged in a matrix of rows and columns, wherein at least two of said memory cells each include:
- a capacitorless transistor having a floating body configured to store data as charge therein when power is applied to said memory cell;
- and
- a nonvolatile memory comprising a bipolar resistive change element configured to store data stored in said floating body upon transfer thereto;
- wherein said floating body has a first conductivity type selected from n-type conductivity type and p-type conductivity type;
- said memory cell further comprising first and second regions at first and second locations of said cell, said first and second regions each having a second conductivity type selected from said n-type conductivity type and said p-type conductivity type and being different from said first conductivity type;
- and
- a circuitry to perform said transfer.
5 more elements
A semiconductor memory cell comprising:
- a bipolar device configured to store data when power is applied to said cell;
- and
- a nonvolatile memory comprising a bipolar resistive change element configured to store data stored in said bipolar device upon transfer thereto.
Dependencies are inferred from the claim text.