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US 9,666,275 B2Granted
Semiconductor memory having both volatile and non-volatile functionality comprising resistive change material and method of operating
AssigneeZeno Semiconductor, Inc.
InventorYuniarto Widjaja
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Abstract
A semiconductor memory cell including a capacitorless transistor having a floating body configured to store data as charge therein when power is applied to the cell, and a non-volatile memory comprising a bipolar resistive change element, and methods of operating.
Claims17
A semiconductor memory cell comprising:
- a bipolar device configured to store data when power is applied to said cell;
- and
- a nonvolatile memory comprising a bipolar resistive change element configured to store data stored in said bipolar device upon transfer thereto,
- wherein said data stored in said bipolar device determines the resistivity of said bipolar resistive change element upon transfer thereto.
1 more element
A semiconductor memory cell comprising:
- a floating body region;
- a non-volatile memory comprising a bipolar resistive change element;
- wherein said floating body region is configured to be charged to a level indicative of a state of the memory cell based on resistivity of said bipolar resistive change element, upon restoration of power to said memory cell.
A method of operating a semiconductor memory cell, wherein said memory cell comprises a floating body region for storing data as volatile memory and a bipolar resistive change element for storing data as non-volatile memory, the method comprising:
- providing the semiconductor memory cell;
- and
- transferring the data stored as resistivity of said bipolar resistive change element to the floating body when power is restored to said memory cell.
Dependencies are inferred from the claim text.