G11C 14/0009
In which the volatile element is a dram cell
Official title: {in which the volatile element is a DRAM cell}
G11C14/0009 (In which the volatile element is a dram cell) appears on 815 US grants and 861 published applications in this corpus.
Search patents in G11C- Granted patents
- 815
- Published applications
- 861
- Assignees
- 154
- Inventors
- 882
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 1 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 1 |
| 2004 | 1 | 2 |
| 2005 | 2 | 8 |
| 2006 | 5 | 13 |
| 2007 | 3 | 5 |
| 2008 | 12 | 4 |
| 2009 | 3 | 20 |
| 2010 | 7 | 13 |
| 2011 | 17 | 20 |
| 2012 | 22 | 35 |
| 2013 | 26 | 30 |
| 2014 | 41 | 51 |
| 2015 | 55 | 71 |
| 2016 | 70 | 81 |
| 2017 | 82 | 85 |
| 2018 | 92 | 110 |
| 2019 | 78 | 81 |
| 2020 | 85 | 68 |
| 2021 | 59 | 57 |
| 2022 | 45 | 32 |
| 2023 | 49 | 34 |
| 2024 | 30 | 15 |
| 2025 | 20 | 19 |
| 2026 | 10 | 6 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
- G11C 14/0018Whereby the nonvolatile element is an eeprom element434
- G11C 14/0045And the nonvolatile element is a resistive ram element, i.e. programmable resistors160
- G11C 14/0027And the nonvolatile element is a ferroelectric element80
- G11C 14/0036And the nonvolatile element is a magnetic ram [mram] element or ferromagnetic73
Recent patents
- Remote direct memory access in multi-tier memory systems6 Oct 2026US 12,754,698 B2Micron Technology, Inc.
- Semiconductor device having electrically floating body transistor, semiconductor device having both volatile and non-volatile functionality and method of operating23 Jun 2026US 12,665,024 B2Zeno Semiconductor, Inc.
- Volatile memory, system on chip and electronic device comprising the same12 May 2026US 12,625,649 B2Samsung Electronics Co., Ltd.
- Manganese or scandium doped ferroelectric device and bit-cell12 May 2026US 12,628,350 B2Kepler Computing Inc.
- Storing a logical-to-physical mapping in NAND memory5 May 2026US 12,619,550 B2Micron Technology, Inc.
- Memory systems, control methods thereof, and power loss protection systems1 Oct 2026US 2026/0299802 A1Yangtze Memory Technologies Co., Ltd.
- Semiconductor device3 Sep 2026US 2026/0262261 A1Semiconductor Energy Laboratory Co.Ltd.
- Flash-dram hybrid memory module30 Apr 2026US 2026/0119427 A1Netlist, Inc.
- Memory devices26 Feb 2026US 2026/0057936 A1Samsung Electronics Co., Ltd.
- Clock mode determination in a memory system19 Feb 2026US 2026/0050379 A1Mosaid Technologies Incorporated
Most cited
By later US patents
- Method of maintaining the state of semiconductor memory having electrically floating body transistor362US 8,130,547 B2Zeno Semiconductor, Inc. · 2012
- Method of maintaining the state of semiconductor memory having electrically floating body transistor337US 8,514,623 B2Zeno Semiconductor, Inc. · 2013
- Semiconductor memory device242US 7,609,551 B2Kabushiki Kaisha Toshiba · 2009
- Semiconductor memory having both volatile and non-volatile functionality and method of operating234US 7,760,548 B22010
- Semiconductor memory having both volatile and non-volatile functionality and method of operating232US 7,847,338 B22010