G11C 14/0045
And the nonvolatile element is a resistive ram element, i.e. programmable resistors
Official title: {and the nonvolatile element is a resistive RAM element, i.e. programmable resistors, e.g. formed of phase change or chalcogenide material}
G11C14/0045 (And the nonvolatile element is a resistive ram element, i.e. programmable resistors) appears on 160 US grants and 154 published applications in this corpus.
Search patents in G11C- Granted patents
- 160
- Published applications
- 154
- Assignees
- 57
- Inventors
- 215
- Latest grant
- 13 Jan 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2005 | 0 | 1 |
| 2006 | 0 | 1 |
| 2007 | 0 | 0 |
| 2008 | 0 | 1 |
| 2009 | 0 | 4 |
| 2010 | 1 | 4 |
| 2011 | 4 | 3 |
| 2012 | 5 | 4 |
| 2013 | 3 | 8 |
| 2014 | 6 | 12 |
| 2015 | 17 | 18 |
| 2016 | 20 | 21 |
| 2017 | 25 | 18 |
| 2018 | 18 | 9 |
| 2019 | 14 | 19 |
| 2020 | 20 | 13 |
| 2021 | 9 | 7 |
| 2022 | 8 | 4 |
| 2023 | 5 | 3 |
| 2024 | 4 | 2 |
| 2025 | 0 | 2 |
| 2026 | 1 | 0 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Memory cell using data storing bipolar device13 Jan 2026US 12,525,291 B2Zeno Semiconductor, Inc.
- Semiconductor memory having both volatile and non-volatile functionality comprising resistive change material and method of operating3 Dec 2024US 12,159,669 B2Zeno Semiconductor, Inc.
- Semiconductor memory having both volatile and non-volatile functionality including resistance change material and method of operating19 Nov 2024US 12,148,472 B2Zeno Semiconductor, Inc.
- Memory cells, memory cell arrays, methods of using and methods of making2 Apr 2024US 11,948,637 B2Zeno Semiconductor, Inc.
- Memory device comprising an electrically floating body transistor23 Jan 2024US 11,882,684 B2Zeno Semiconductor, Inc.
- Semiconductor Memory Having Both Volatile and Non-Volatile Functionality Comprising Resistive Change Material and Method of Operating20 Feb 2025US 2025/0061945 A1Zeno Semiconductor, Inc.
- Semiconductor Memory Having Both Volatile and Non-Volatile Functionality Including Resistance Change Material and Method of Operating30 Jan 2025US 2025/0037766 A1Zeno Semiconductor, Inc.
- Memory Cells, Memory Cell Arrays, Methods of Using and Methods of Making6 Jun 2024US 2024/0185917 A1Zeno Semiconductor, Inc.
- Memory Device Comprising an Electrically Floating Body Transistor28 Mar 2024US 2024/0107741 A1Zeno Semiconductor, Inc.
- Semiconductor Memory Having Both Volatile and Non-Volatile Functionality Comprising Resistive Change Material and Method of Operating9 Nov 2023US 2023/0360702 A1Zeno Semiconductor, Inc.
Most cited
By later US patents
- Memory cells, memory cell arrays, methods of using and methods of making215US 8,194,451 B2Zeno Semiconductor, Inc. · 2012
- Semiconductor memory having electrically floating body transistor207US 8,174,886 B2Zeno Semiconductor, Inc. · 2012
- Semiconductor memory having both volatile and non-volatile functionality including resistance change material and method of operating193US 8,243,499 B2Zeno Semiconductor, Inc. · 2012
- Memory cells, memory cell arrays, methods of using and methods of making169US 8,654,583 B2Zeno Semiconductor, Inc. · 2014
- Memory cells, memory cell arrays, methods of using and methods of making154US 8,531,881 B2Zeno Semiconductor, Inc. · 2013