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US 12,159,669 B2Granted
Semiconductor memory having both volatile and non-volatile functionality comprising resistive change material and method of operating
AssigneeZeno Semiconductor, Inc.
InventorYuniarto Widjaja
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Abstract
A semiconductor memory cell including a capacitorless transistor having a floating body configured to store data as charge therein when power is applied to the cell, and a non-volatile memory comprising a bipolar resistive change element, and methods of operating.
Claims20
An integrated circuit comprising:
- a semiconductor memory array comprising:
- a plurality of memory cells arranged in a matrix of rows and columns, wherein at least two of said memory cells each include:
- a capacitorless transistor having a floating body configured to store data when power is applied to said memory cell;
- and
- a non-volatile memory comprising a bipolar resistive change element configured to store data stored in said floating body upon transfer thereto during a shadowing operation;
- wherein said floating body is configured to be charged to a level indicative of a state of said memory cell based on resistivity of said bipolar resistive change element when a restore operation is performed;
- wherein said memory cell is configured so that a reset operation is performed on said non-volatile memory upon completion of said restore operation;
- wherein current flow through said memory cell during said reset operation is the opposite of current flow through said memory cell during said shadowing operation;
- wherein said shadowing, restore, and reset operations are performed on at least two of said at least two memory cells in parallel;
- and
- a control circuit configured to perform said shadowing, restore, and reset operations.
8 more elements
An integrated circuit comprising:
- a semiconductor memory array comprising:
- a plurality of memory cells arranged in a matrix of rows and columns, wherein at least two of said memory cells each include:
- a bipolar device configured to store data when power is applied to said memory cell;
- and
- a non-volatile memory comprising a bipolar resistive change element configured to store data stored in said floating body upon transfer thereto during a shadowing operation;
- wherein said floating body is configured to be charged to a level indicative of a state of said memory cell based on resistivity of said bipolar resistive change element upon performance of a restore operation;
- wherein said memory cell is configured to perform a reset operation on said non-volatile memory upon completion of said restore operation;
- wherein current flow through said memory cell during said reset operation is the opposite of current flow through said memory cell during said shadowing operation;
- wherein said shadowing, restore, and reset operations are performed on at least two of said at least two memory cells in parallel;
- and
- a control circuit configured to perform said shadowing, restore, and reset operations.
8 more elements
Dependencies are inferred from the claim text.