G11C 14/0018
Whereby the nonvolatile element is an eeprom element
Official title: {whereby the nonvolatile element is an EEPROM element, e.g. a floating gate or metal-nitride-oxide-silicon [MNOS] transistor}
G11C14/0018 (Whereby the nonvolatile element is an eeprom element) appears on 434 US grants and 471 published applications in this corpus.
Search patents in G11C- Granted patents
- 434
- Published applications
- 471
- Assignees
- 97
- Inventors
- 403
- Latest grant
- 23 Jun 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 1 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 1 |
| 2004 | 0 | 0 |
| 2005 | 1 | 6 |
| 2006 | 4 | 12 |
| 2007 | 3 | 5 |
| 2008 | 11 | 3 |
| 2009 | 3 | 18 |
| 2010 | 6 | 9 |
| 2011 | 14 | 15 |
| 2012 | 17 | 25 |
| 2013 | 21 | 22 |
| 2014 | 31 | 30 |
| 2015 | 31 | 38 |
| 2016 | 34 | 46 |
| 2017 | 39 | 39 |
| 2018 | 46 | 29 |
| 2019 | 33 | 38 |
| 2020 | 35 | 37 |
| 2021 | 24 | 35 |
| 2022 | 23 | 17 |
| 2023 | 23 | 21 |
| 2024 | 16 | 8 |
| 2025 | 12 | 13 |
| 2026 | 6 | 4 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor device having electrically floating body transistor, semiconductor device having both volatile and non-volatile functionality and method of operating23 Jun 2026US 12,665,024 B2Zeno Semiconductor, Inc.
- Storing a logical-to-physical mapping in NAND memory5 May 2026US 12,619,550 B2Micron Technology, Inc.
- Storage device and method of operating the same5 May 2026US 12,620,440 B2SK hynix Inc.
- Fast programming scheme for power loss protection—a machine learning based algorithm24 Mar 2026US 12,586,633 B2Samsung Electronics Co., Ltd.
- High performance persistent memory17 Mar 2026US 12,579,042 B2Rambus Inc.
- Memory systems, control methods thereof, and power loss protection systems1 Oct 2026US 2026/0299802 A1Yangtze Memory Technologies Co., Ltd.
- Semiconductor device3 Sep 2026US 2026/0262261 A1Semiconductor Energy Laboratory Co.Ltd.
- Flash-dram hybrid memory module30 Apr 2026US 2026/0119427 A1Netlist, Inc.
- Clock mode determination in a memory system19 Feb 2026US 2026/0050379 A1Mosaid Technologies Incorporated
- Fast programming scheme for power loss protection - a machine learning based algorithm4 Dec 2025US 2025/0372155 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- Method of maintaining the state of semiconductor memory having electrically floating body transistor362US 8,130,547 B2Zeno Semiconductor, Inc. · 2012
- Method of maintaining the state of semiconductor memory having electrically floating body transistor337US 8,514,623 B2Zeno Semiconductor, Inc. · 2013
- Semiconductor memory device242US 7,609,551 B2Kabushiki Kaisha Toshiba · 2009
- Semiconductor memory having both volatile and non-volatile functionality and method of operating234US 7,760,548 B22010
- Semiconductor memory having both volatile and non-volatile functionality and method of operating232US 7,847,338 B22010