G11C 14/0036
And the nonvolatile element is a magnetic ram [mram] element or ferromagnetic
Official title: {and the nonvolatile element is a magnetic RAM [MRAM] element or ferromagnetic cell}
G11C14/0036 (And the nonvolatile element is a magnetic ram [mram] element or ferromagnetic) appears on 73 US grants and 87 published applications in this corpus.
Search patents in G11C- Granted patents
- 73
- Published applications
- 87
- Assignees
- 29
- Inventors
- 117
- Latest grant
- 4 Nov 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2004 | 1 | 2 |
| 2005 | 1 | 2 |
| 2006 | 1 | 0 |
| 2007 | 0 | 0 |
| 2008 | 1 | 0 |
| 2009 | 0 | 2 |
| 2010 | 0 | 1 |
| 2011 | 2 | 0 |
| 2012 | 0 | 1 |
| 2013 | 0 | 2 |
| 2014 | 1 | 6 |
| 2015 | 4 | 10 |
| 2016 | 10 | 9 |
| 2017 | 9 | 12 |
| 2018 | 4 | 5 |
| 2019 | 7 | 4 |
| 2020 | 7 | 9 |
| 2021 | 9 | 6 |
| 2022 | 5 | 9 |
| 2023 | 3 | 3 |
| 2024 | 6 | 2 |
| 2025 | 2 | 1 |
| 2026 | 0 | 1 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Logic drive using standard commodity programmable logic IC chips comprising non-volatile random access memory cells4 Nov 2025US 12,464,820 B2iCometrue Company Ltd.
- Memory cell with access device and memory capacitor structures18 Mar 2025US 12,254,914 B2Ferroelectric Memory GmbH
- Semiconductor memory having both volatile and non-volatile functionality comprising resistive change material and method of operating3 Dec 2024US 12,159,669 B2Zeno Semiconductor, Inc.
- SGT memory device with improved write errors18 Jun 2024US 12,016,172 B2Unisantis Electronics Singapore Pte. Ltd.
- Semiconductor structure and storage circuit12 Mar 2024US 11,930,644 B2Changxin Memory Technologies, Inc.
- Logic drive using standard commodity programmable logic ic chips comprising non-volatile random access memory cells12 Feb 2026US 2026/0047199 A1iCometrue Company Ltd.
- Semiconductor Memory Having Both Volatile and Non-Volatile Functionality Comprising Resistive Change Material and Method of Operating20 Feb 2025US 2025/0061945 A1Zeno Semiconductor, Inc.
- Memory cell arrangement and method thereof18 Apr 2024US 2024/0127876 A1Ferroelectric Memory GmbH
- Logic drive using standard commodity programmable logic ic chips comprising non-volatile random access memory cells28 Mar 2024US 2024/0105729 A1iCometrue Company Ltd.
- Semiconductor Memory Having Both Volatile and Non-Volatile Functionality Comprising Resistive Change Material and Method of Operating9 Nov 2023US 2023/0360702 A1Zeno Semiconductor, Inc.
Most cited
By later US patents
- Semiconductor memory having both volatile and non-volatile functionality comprising resistive change material and method of operating106US 9,025,358 B2Zeno Semiconductor, Inc. · 2015
- Semiconductor memory having both volatile and non-volatile functionality comprising resistive change material and method of operating75US 9,401,206 B2Zeno Semiconductor, Inc. · 2016
- Semiconductor memory having both volatile and non-volatile functionality comprising resistive change material and method of operating69US 9,666,275 B2Zeno Semiconductor, Inc. · 2017
- Semiconductor memory having both volatile and non-volatile functionality comprising resistive change material and method of operating59US 9,922,711 B2Zeno Semiconductor, Inc. · 2018
- Logic drive using standard commodity programmable logic IC chips comprising non-volatile random access memory cells48US 10,892,011 B2iCometrue Company Ltd. · 2021