Back to results
US 11,930,644 B2Granted
Semiconductor structure and storage circuit
AssigneeChangxin Memory Technologies, Inc.
InventorsEr-Xuan Ping, Xiaoguang Wang, Baolei Wu, Yulei Wu
Life of this patent
Estimating the term…
Abstract
The present disclosure provides a semiconductor structure and a storage circuit that implements the storage structure of a magnetoresistive random access memory (MRAM) based on a dynamic random access memory (DRAM) fabrication platform.
Claims18
A semiconductor structure, comprising:
- multiple first active regions that are separate from one another and located in a substrate;
- connection pads, each of the connection pads connecting ends of adjacent first active regions of the multiple first active regions;
- and
- magnetic tunnel junctions, each of the magnetic tunnel junctions being connected with a respective one of the connection pads;
- wherein each of the multiple first active regions connected with a respective one of the connection pads is located in a first region of the substrate, and
- the semiconductor structure further comprises;
- second active regions located in a second region of the substrate;
- and
- capacitor storage structures, each of the capacitor storage structures being connected with an end of a respective one of the second active regions by a capacitor contact plug.
6 more elements
A storage circuit, comprising:
- a bit line and a word line;
- a first transistor and a second transistor, the first transistor and the second transistor being connected with the word line respectively;
- a magnetic tunnel junction, one end of the magnetic tunnel junction being connected with the bit line, and another end of the magnetic tunnel junction being connected with one end of the first transistor and one end of the second transistor, respectively;
- a first selection line and a second selection line, the first selection line and the second selection line being connected with another end of the first transistor and another end of the second transistor, respectively;
- a third transistor connected with the word line;
- and
- a capacitor storage bit line connected with one end of the third transistor, and a capacitor storage structure connected with another end of the third transistor.
4 more elements
Dependencies are inferred from the claim text.