G11C 13/0011
Comprising conductive bridging ram [cbram] or programming metallization cells [pmcs]
Official title: {comprising conductive bridging RAM [CBRAM] or programming metallization cells [PMCs]}
G11C13/0011 (Comprising conductive bridging ram [cbram] or programming metallization cells [pmcs]) appears on 1,110 US grants and 1,139 published applications in this corpus.
Search patents in G11C- Granted patents
- 1,110
- Published applications
- 1,139
- Assignees
- 189
- Inventors
- 1,139
- Latest grant
- 8 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 0 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 1 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 1 | 0 |
| 1999 | 2 | 0 |
| 2000 | 1 | 0 |
| 2001 | 0 | 1 |
| 2002 | 4 | 4 |
| 2003 | 3 | 26 |
| 2004 | 11 | 20 |
| 2005 | 23 | 39 |
| 2006 | 24 | 53 |
| 2007 | 40 | 62 |
| 2008 | 48 | 65 |
| 2009 | 33 | 44 |
| 2010 | 47 | 60 |
| 2011 | 59 | 67 |
| 2012 | 67 | 71 |
| 2013 | 59 | 65 |
| 2014 | 80 | 63 |
| 2015 | 99 | 69 |
| 2016 | 92 | 54 |
| 2017 | 70 | 46 |
| 2018 | 42 | 51 |
| 2019 | 58 | 51 |
| 2020 | 49 | 54 |
| 2021 | 57 | 63 |
| 2022 | 43 | 38 |
| 2023 | 34 | 31 |
| 2024 | 35 | 22 |
| 2025 | 21 | 9 |
| 2026 | 5 | 11 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Neuromorphic circuit, neuromorphic array learning method, and program8 Sep 2026US 12,731,020 B2TDK Corporation
- Resistance change element, storage device, and neural network apparatus28 Apr 2026US 12,614,587 B2Kabushiki Kaisha Toshiba
- Self-aligned heater for PCRAM using a continuous dielectric14 Apr 2026US 12,604,675 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device including shield layer20 Jan 2026US 12,532,672 B2SK hynix Inc.
- Lateral programmable metallization cell devices13 Jan 2026US 12,527,236 B2Arizona Board of Regents on behalf of Arizona State University
- In-memory acceleration using 6t-rrams with signed weight values13 Aug 2026US 2026/0237431 A1Government of the United States as Represented by the Secretary of the Air Force
- Self-aligned heater for pcram using a continuous dielectric6 Aug 2026US 2026/0231692 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Memory device comprising electro-chemical layer, method for manufacturing memory device and method for driving memory device30 Jul 2026US 2026/0223374 A1Samsung Electronics Co., Ltd.
- Resistive random-access memory with hybrid bonding integration18 Jun 2026US 2026/0171151 A1Hefei Reliance Memory Limited
- Three-dimensional vertical nonvolatile memory device including memory cell strings, method of driving the same, and electronic apparatus including the same18 Jun 2026US 2026/0173378 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- Programmable metallization cell structure and method of making same441US 5,761,115 AArizona Board of Regents · 1998
- Programmable microelectronic devices and method of forming and programming same396US 6,487,106 B1Arizona Board of Regents · 2002
- Programmable metallization cell structure and method of making same327US 6,084,796 AArizona Board of Regents · 2000
- Programmable sub-surface aggregating metallization structure and method of making same313US 6,418,049 B1Arizona Board of Regents · 2002
- Programmable metallization cell structure and method of making same305US 5,914,893 AArizona Board of Regents · 1999