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US 12,532,672 B2Granted
Semiconductor device including shield layer
AssigneeSK hynix Inc.
InventorsJong Min Yun, Soo Gil Kim, Soo Man Seo
Life of this patent
Estimating the term…
Abstract
A semiconductor device may include: a first conductive line; a second conductive line disposed over the first conductive line and spaced apart from the first conductive line; a memory cell disposed between the first conductive line and the second conductive line and including a memory layer; and one or more shield layers disposed at least one of at a first location over the memory layer or a second location under the memory layer, the one or more shield layers including an MXene material.
Claims24
A semiconductor device, comprising:
- a first conductive line;
- a second conductive line disposed over the first conductive line and spaced apart from the first conductive line;
- a memory cell disposed between the first conductive line and the second conductive line and including a memory layer;
- and
- one or more shield layers disposed at least one of at a first location over the memory layer or a second location under the memory layer, the one or more shield layers including an MXene material and configured to shield the memory layer from electromagnetic interference.
2 more elements
A semiconductor device comprising:
- a plurality of memory cells disposed over a substrate, each of the plurality of memory cells including a memory layer;
- an encapsulation layer disposed to encapsulate each of the plurality of memory cells;
- and
- a shield layer disposed over the encapsulation layer and including an MXene material and configured to shield the memory layer from electromagnetic interference.
1 more element
Dependencies are inferred from the claim text.